Control circuit and control method for double-semiconductor switching tube bidirectional switch

Abstract

The invention relates to a control circuit and a method for a bi-directional switch of a dual semiconductor switch tube, belonging to the field of electronic technology, which can control the on-off of the bi-directional switch. The circuit includes: a V-I conversion circuit that converts a control voltage into a control current when the high and low reference levels are fixed as a local power supply and a ground level; a current mode transmission circuit for transmitting a control current to the first IV conversion circuit; a first IV conversion circuit that converts the control current intoa comparison voltage and inputs the voltage to the first on-off control circuit; a first on-off control circuit that performs a first comparison between the comparison voltage and the voltage of the first IO terminal to obtain a control voltage of the first control terminal; a second on-off control circuit performing a second comparison directly using the control voltage and the voltage of the second IO terminal or the comparison voltage converted from the control current and the voltage of the second IO terminal to obtain a control voltage of the second control terminal , and the local and power levels used for the first and second comparisons are generated based on the voltages of the first and second IO terminals.

Description

technical field [0001] The present disclosure relates to the field of electronic technology, and in particular, relates to a control circuit and a control method for bidirectional switching of dual semiconductor switching transistors. Background technique [0002] Currently, two semiconductor switching transistors are usually used to form a bidirectional switch. figure 1 An example is shown of a bidirectional switch formed by two N-type MOSFETs, wherein the diode in the figure is the body diode of the N-type MOSFET. [0003] At present, a control voltage is usually used to control the turn-on and turn-off of the bidirectional switch of the dual semiconductor switch transistors. For example, when the potentials at the two ends of X and Y are different and it is necessary to complete the opening of the current switch between the two ends, it is necessary to first judge the voltage level at the two ends of X and Y, and when the larger voltage value Vmax=MAX(V( After the value...

AI Technical Summary

Problems solved by technology

When the voltage difference between X and Y ends is large, this control technology will make the control structure composed of general semiconductor devices invalid. The gate of the MOS device can only withstand a limited voltage, and its value is usually about 5-20V, which is not enough to withstand a higher dynamic voltage range

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