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A kind of preparation method of cadmium manganese telluride crystal transmission electron microscope section sample

A technology of transmission electron microscopy and cadmium telluride manganese, which is applied in the field of compound semiconductor materials, can solve the problems that affect the analysis of the real structure and defects of materials, low success rate, and waste of time

Active Publication Date: 2021-02-02
CHANGAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the manual grinding and pitting process, because the sample is extremely thin and fragile, and the pits are easy to introduce defects, which affects the analysis of the real structure and defects of the material
This method wastes time and has a low success rate
Now for the sample preparation of semiconductor materials with low hardness and high brittleness, a small hand-held polisher method can be used. However, for different materials, the steps of the polishing process and the selection of parameters need to be accurately determined through experiments to ensure that the samples are well prepared. The defects introduced in the process are the lowest. If the sample preparation process itself introduces defects, it will be meaningless to study the microscopic defects of materials with transmission electron microscopy.

Method used

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  • A kind of preparation method of cadmium manganese telluride crystal transmission electron microscope section sample
  • A kind of preparation method of cadmium manganese telluride crystal transmission electron microscope section sample
  • A kind of preparation method of cadmium manganese telluride crystal transmission electron microscope section sample

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preparation example Construction

[0029] The present invention uses a hand-held wedge polisher for the preparation of a TEM cross-sectional sample of a vanadium-doped cadmium telluride manganese crystal, and the technical solution adopted to solve the technical problem: a preparation method of a cadmium telluride manganese TEM sample, its characteristics It consists of the following steps:

[0030] (1): Polish the first side of the sample

[0031] Including fixing the cadmium manganese telluride TEM sample to be polished on the sample stage, the plane where the sample is located is coplanar with the other two support rods, and polishing the cadmium manganese telluride TEM sample with 9 μm diamond film, 3 μm diamond film and 1 μm diamond film in sequence first side. The basis for replacing the diamond film is: when the surface of the sample is polished to only the same direction scratches left by the diamond film particles in the previous step, replace the film of the next specification. Get the cadmium manga...

Embodiment 1

[0057] On the first day, grind the first side of the CMT sample: use ultrasonic or blade to remove Cd 0.9 mn 0.1 The Te:V sample was cut into a rectangular sample of 3mm×2mm, hereinafter referred to as the CMT sample. Remove the sample stage of the polisher produced by Allied HighTech., put it on a heating stage with a set temperature of 120°C, fix the CMT sample on the sample stage with crystal adhesive glue, and wait for 10 minutes after the sample is firmly adhered. Polish the sample with 9μm, 3μm and 1μm diamond grinding films in turn. Every time the film is replaced, it is necessary to confirm that the scratches are consistent in a certain direction under a 50x optical microscope, indicating that the scratches are caused by the diamond film in the previous step rather than other scratches. mark. Then remove the CMT sample, wash it carefully with acetone solution, and replace the acetone solution 2 to 3 times.

[0058] Adhesive support material gallium arsenide: use the...

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Abstract

The invention relates to a preparation method of a cadmium tellurium manganese TEM sample. Step 1: the first surface is initially ground, and the cadmium telluride manganese TEM sample to be polished is sequentially first processed with a 9 μm diamond film, a 3 μm diamond film and a 1 μm diamond film. Surface grinding to obtain the primary grinding sample; Step 2: sample support, use gallium arsenide to support the polished surface of the primary grinding sample obtained in step 1; Step 3: pre-thinning the second surface until a wedge-shaped thin area appears, and use 9 μm diamond film, 3 μm diamond film and 1 μm diamond film are used to polish the second surface of the primary grinding sample to obtain a pre-thinned sample with a wedge-shaped thin area; Step 4: Precise thinning of the wedge-shaped thin area, using ion thinning The instrument performs precision thinning on the pre-thinned sample with wedge-shaped thin area obtained in step three. The invention does not need to use a traditional pit instrument to carry out pits, and avoids the defects introduced by the pit process. The precision thinning process only takes 2 to 4 hours, which greatly reduces the defects caused by ion beam bombardment. One or a batch of tellurium-manganese cross-sectional samples for transmission electron microscopy can be prepared in three days, with a high success rate.

Description

technical field [0001] The invention belongs to the field of compound semiconductor materials, and in particular relates to a preparation method of a cadmium manganese telluride crystal transmission electron microscope section sample. Background technique [0002] Cadmium Manganese Telluride (Cd 1-x mn x Te or CMT) is a semiconductor material with excellent performance. Due to its unique magnetic and magneto-optical properties, it was used in Faraday rotators, optical isolators and Solar cells and other fields. In recent years, due to some performance advantages of cadmium manganese telluride (manganese ions can increase its forbidden band width faster; the segregation coefficient of manganese in cadmium telluride is close to 1, which makes the growth state of cadmium manganese telluride crystal composition more uniform) was found, making it the best candidate material for room temperature nuclear radiation detectors. [0003] CdMnTe crystals currently grown artificially...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/2202
CPCG01N23/2202G01N2223/07
Inventor 栾丽君刘宗文刘宏伟周翠凤郑丹
Owner CHANGAN UNIV
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