Method for manufacturing semiconductor device
A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as device performance damage
Active Publication Date: 2021-09-10
TAIWAN SEMICON MFG CO LTD
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- Application Information
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Problems solved by technology
Furthermore, when dopants diffuse from the source / drain regions of semiconductor devices to the channel region, device performance suffers
Method used
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[0026] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, the dimensions of the elements are not limited to the disclosed ranges or values, but may depend on process conditions and / or desired properties of the device. In addition, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. components so that the first component and the second component may not be in direct contact with each other. Various features may be arbitrarily drawn in...
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Abstract
A method for manufacturing a semiconductor device, the method comprising: forming a fin extending along a first direction on a semiconductor substrate, and forming a sacrificial gate extending along a second direction substantially perpendicular to the first direction over the fin electrode structure. The sacrificial gate electrode structure includes a sacrificial gate dielectric layer and a sacrificial gate electrode layer disposed above the sacrificial gate dielectric layer. Opposite gate sidewall spacers extending along the second direction are formed on opposite sides of the sacrificial gate electrode layer. The sacrificial gate electrode layer is removed to form gate spacers. After removing the gate electrode layer, fluorine is implanted into the gate sidewall spacer by performing a first fluorine implantation. The sacrificial gate dielectric layer is removed and a high-k gate dielectric layer is formed in the gate spacers. After forming the high-k gate dielectric layer, fluorine is implanted into the gate sidewall spacers and fins by performing a second fluorine implant.
Description
technical field [0001] Embodiments of the invention relate to methods for fabricating semiconductor devices. Background technique [0002] High-k materials (k>5.0) are used as insulating spacer materials in semiconductor devices. It is desirable to modify the value of k to improve device performance. Furthermore, when dopants diffuse from the source / drain regions of the semiconductor device to the channel region, device performance suffers. It is desirable to prevent dopants from diffusing into the channel region. Contents of the invention [0003] An embodiment of the present invention provides a method for manufacturing a semiconductor device, including: forming a fin extending along a first direction on a semiconductor substrate; forming a sacrificial gate electrode extending along a second direction over the fin structure, the second direction is perpendicular to the first direction, wherein the sacrificial gate electrode structure includes a sacrificial gate die...
Claims
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IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66795H01L29/7856H01L21/823412H01L21/26506H01L21/28167H01L21/2822H01L21/28238H01L21/31155H01L21/823468H01L21/823462H01L21/26586H01L21/823821H01L21/823431H01L27/0886H01L29/517
Inventor 王参群聂俊峰戴巧婷
Owner TAIWAN SEMICON MFG CO LTD