Unlock instant, AI-driven research and patent intelligence for your innovation.

Infrared detector and preparation method thereof

An infrared detector and barrier layer technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of poor device dark current control and high surface leakage current, improve reliability and simplify devices. The effect of craftsmanship

Active Publication Date: 2020-11-27
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the immature processing technology and passivation methods of the antimonide material system, the side wall damage, surface oxidation and contamination caused by the mesa etching cause the surface leakage current of the antimonide superlattice detector to be high, and the dark area of ​​the device is relatively high. Poor current control, especially at long and very long wavelengths

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] refer to figure 1 The infrared detector provided in this embodiment includes a substrate 1, a first electrode 2, a plurality of second electrodes 3, and an absorption layer 4, a first barrier layer 5, and a second electrode arranged sequentially on the substrate 1 from bottom to top. Two barrier layers 6, the first electrode 2 is connected to the substrate 1, the second barrier layer 6 includes a plurality of semiconductor layers 61 arranged in an array, and the plurality of semiconductor layers 61 correspond to a plurality of second electrodes 3 one by one, each The semiconductor layer 61 is connected to a second electrode 3 . Wherein, the second electrode 3 is disposed on the top of the semiconductor layer 61 .

[0027] Specifically, the material of the substrate 1 is n-type GaSb or InAs. The absorbing layer 4 is located on the upper surface of the substrate 1, wherein the substrate 1 is not completely covered by the absorbing layer 4, and the area of ​​the substrat...

Embodiment 2

[0037] refer to figure 2 , this embodiment provides a method for preparing the infrared detector in Embodiment 1, the preparation method comprising:

[0038] Step S1 , providing a substrate 1 , wherein the material of the substrate 1 is n-type InAs.

[0039] Step S2, using a metal-organic chemical vapor deposition (MOCVD) process as a growth process, and the growth sources are TMGa, TMIn, TMSb and AsH 3 , the n-type dopant source is SiH 4 , the p-type dopant source is DEZn, the growth temperature is about 600°C, and the reaction chamber pressure is 200Torr. After removing the impurities on the surface of the substrate 1 by high-temperature treatment, it grows sequentially on the substrate 1 from bottom to top:

[0040] (1) The absorption layer 4, the absorption layer 4 is an n-type doped InAs / GaSb superlattice, the dopant is Si, and the doping average concentration is 1×10 16 cm -3 . The total thickness of the absorbing layer 4 is 2.0 μm, wherein the thickness of the In...

Embodiment 3

[0050] refer to figure 2 , this embodiment provides another preparation method of the infrared detector in Embodiment 1, the preparation method comprising:

[0051] Step S1 , providing a substrate 1 , wherein the material of the substrate 1 is n-type GaSb.

[0052] Step S2, using the molecular beam epitaxy (MBE) process as the growth process, the growth source is solid single source Ga, In, As and Sb, the n-type dopant source is Si, the p-type dopant source is Be, and the growth temperature is about 400 ℃. After the substrate 1 is degassed and impurity removed, grow sequentially on the substrate 1 from bottom to top:

[0053] (1) The absorption layer 4, the absorption layer 4 is an n-type doped InAs / GaSb superlattice, the dopant is Si, and the doping average concentration is 1×10 17 cm -3 . The total thickness of the absorbing layer 4 is 5.4 μm, wherein the thickness of the InAs layer is 4.8 nm, the thickness of the GaSb layer is 2.4 nm, and the alternating period of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an infrared detector and a preparation method thereof. The infrared detector includes a substrate, a first electrode, a plurality of second electrodes, an absorption layer and a first potential barrier arranged sequentially on the substrate from bottom to top layer, the second barrier layer, the first electrode is connected to the substrate, the second barrier layer includes a plurality of semiconductor layers arranged in an array, and the plurality of semiconductor layers corresponds to a plurality of second electrodes one by one, and each semiconductor layer corresponds to a The second electrode is connected. The preparation method includes: providing a substrate; growing an absorbing layer, a first barrier layer, and a second barrier layer sequentially on the substrate from bottom to top; etching the second barrier layer to form an array of A plurality of semiconductor layers; respectively depositing first electrodes on the substrate and depositing a plurality of second electrodes on the plurality of semiconductor layers. In the infrared detector, only the second potential barrier layer is etched, and the electrical isolation of the device is realized without destroying the absorbing layer, which simplifies the device process and improves the reliability of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Infrared radiation detection is an important part of infrared technology, widely used in thermal imaging, satellite remote sensing, gas monitoring, optical communication, spectral analysis and other fields. Antimonide InAs / GaSb type II superlattice infrared detectors are considered to be one of the most ideal choices for the preparation of third-generation infrared detectors because of their good uniformity, low Auger recombination rate, and large wavelength adjustment range. Compared with mercury cadmium telluride infrared detector (HgCdTe), it has better uniformity and repeatability, lower cost, and better performance in the very long wavelength band; compared with quantum well infrared detector (QWIP), its quantum efficiency is higher , The dark current is smaller and the process is si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0304H01L31/109H01L31/18
CPCH01L31/0304H01L31/035236H01L31/035263H01L31/109H01L31/184Y02P70/50
Inventor 黄勇熊敏赵宇吴启花
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI