Check patentability & draft patents in minutes with Patsnap Eureka AI!

A method and a system for writing EEPROM data

A data writing and data technology, applied in the field of data processing, can solve the problems of large single storage block, low EEPROM space utilization, power failure damage, etc., to reduce space size, improve space utilization, and ensure write security. Effect

Active Publication Date: 2019-01-18
WEICHAI POWER CO LTD
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the use of all data in the prior art, the space utilization rate of the EEPROM is low, and only half of the available space of the EEPROM can be stored, and a single storage block is relatively large, so the probability of power failure damage is greater

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method and a system for writing EEPROM data
  • A method and a system for writing EEPROM data
  • A method and a system for writing EEPROM data

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] The terms "first" and "second" in the specification and claims of the present invention and the above drawings are used to distinguish different objects, rather than to describe a specific order. Furthermore, the terms "comprising" and "having", and any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, product or apparatus comprising a series of steps or units is not defined by listed steps or u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method and a system for writing EEPROM data. The method comprises the following steps: dividing EEPROM storage space into a plurality of storage blocks; Determining a backuparea and a storage area in the memory block; Dividing the EEPROM data into data blocks matching storage areas in mumber; Writing a first data block to the backup area, and if the first data block is successfully written, determining the backup area as an effective area of the first data block; re-determining a first storage area corresponding to the first data block as a backup area, writing a second data block to the backup area, and re-judgingwhether the second data block is successfully written until all the EEPROM data are written. The invention realizes the purpose of improving the utilization rate of EEPROM space and ensuring the safe writing of EEPROM data.

Description

technical field [0001] The invention relates to the technical field of data processing, in particular to a method and system for writing EEPROM data. Background technique [0002] With the rapid development of industrial equipment, the demand for smart instrumentation equipment has surged. Based on the lack of internal control resources, the demand for advanced, safe and low-cost external non-volatile memory is increasing. Based on various factors such as cost, ease of use, erasing and reprogramming through the action of a higher than ordinary voltage, smart meters usually use EEPROM (Electrically Erasable Programmable Read-Only Memory, electrically erasable programmable read-only memory) to store All important parameters about the normal operation of the instrument. [0003] The ECU (Electronic Control Unit, electronic control unit) will store the running time, mileage and other data in the EEPROM when the T15 is powered off, and then read it from the EEPROM next time it i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F3/06
CPCG06F3/0622G06F3/064
Inventor 刘晓波史家涛陈娜娜张国花赵祥博徐龙增
Owner WEICHAI POWER CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com