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Wide-range control continuous manufacturing equipment and method of black silicon micronano structure

A technology of micro-nano structure and manufacturing equipment, applied in the direction of sustainable manufacturing/processing, final product manufacturing, climate sustainability, etc., can solve the difficulty of increasing the opening size, increasing the etching time, and slowing down the travel of the transmission device speed, etc.

Active Publication Date: 2019-02-15
CHANGZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The opening of the micro-nano structure is small. By increasing the etching time, that is, slowing down the speed of the transmission device, the etching depth of the micro-nano structure can be increased, but it is difficult to increase the opening size and reduce the production of black silicon. production capacity

Method used

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  • Wide-range control continuous manufacturing equipment and method of black silicon micronano structure
  • Wide-range control continuous manufacturing equipment and method of black silicon micronano structure
  • Wide-range control continuous manufacturing equipment and method of black silicon micronano structure

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Embodiment 1: The reaction chamber 2 is 2.5m long, 500mm wide, and 300mm high. The size of the silicon wafer 7 is 156mm×156mm. The silicon wafer 7 enters the reaction chamber 2 continuously through the conveyor belt 1 . The conveyor belt 1 is made of high-strength carbon fiber material with a thickness of 10 mm. During the transmission process, the conveyor belt 1 is always tight to ensure that the silicon wafer 7 is transported into the reaction chamber 2 horizontally. By pumping system 9, comprise molecular pump, dry pump etc., the vacuum degree of reaction chamber 2 is evacuated to be lower than 10 -3 Pa; into SF through three-way intake pipe 5 6 and O 2 , the flow rate is respectively 2500sccm and 1800sccm, and the chlorine gas is introduced through the inlet pipe 6 all the way, and the flow rate is 500sccm. The pumping system 9 keeps working all the time. By adjusting the valve of the pumping system 9 and controlling the pumping rate, the internal pressure of the...

Embodiment 2

[0039] One air inlet pipe 6 is not fed with chlorine gas, the moving speed of the conveyor belt is 250mm / min, and the rest of the structures and parameters are the same as those in the first embodiment. image 3 The SEM image of the silicon wafer micro-nano structure prepared for this example.

[0040] (What is the difference or description of the SEM images of the above two embodiments, please add here)

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Abstract

The invention relates to wide-range control continuous manufacturing equipment and method of a black silicon micronano structure. The continuous manufacturing equipment is provided with a vacuum reaction cavity and a conveying belt, wherein the conveying belt transversely penetrates through the reaction cavity and is used for transmitting a silicon wafer, an upper metal plate is arranged above theconveying belt, a lower metal plate is arranged below the conveying belt and is parallel to the upper metal plate, small holes are formed in the upper metal plate and the lower metal plate, an alternating electric field is formed between the upper metal plate and the lower metal plate, a ceramic baffle plate is arranged between the upper metal plate and the conveying belt and can ascend and descend to adjust airflow concentration gradient in a horizontal direction, an upper surface of the reaction cavity communicates with an air inlet system, a reaction gas is introduced to the air inlet system, and an air pumping system is connected with a bottom surface of the reaction cavity. an air field structure with different gas gradient distribution is formed in the reaction cavity, different reaction gases are combined, gradual change is generated along a horizontal motion direction of the silicon wafer by taking isotropy rapid etching as main and anisotropy slow etching as main, so that wide-range control of the continuously-manufactured black silicon micronano structure is achieved.

Description

technical field [0001] The invention relates to the technical field of micro-nano structure manufacturing equipment, in particular to a continuous manufacturing equipment and method for wide-range control of black silicon micro-nano structures. Background technique [0002] In recent years, compared with the micron-scale pyramid structure formed by the traditional monocrystalline silicon alkali texturing and the micron-scale pits formed by the polycrystalline acid texturing, the surface texturing technology with a darker color on the surface of silicon wafers is usually called black silicon technology. The mainstream methods include metal catalyzed chemical corrosion (MCCE) for wet texturing and ion reaction method (RIE) for dry texturing. Wet black silicon technology is double-sided texture, and the texture of the texture mainly depends on the quality of silicon wafers and process conditions. Dry black silicon technology is maskless reactive ion etching method, which is si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/1804H01L31/1876Y02P70/50
Inventor 丁建宁袁宁一
Owner CHANGZHOU UNIV