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A kind of preparation method of core-shell structure nanocrystal

A nanocrystal and core-shell structure technology, applied in the field of semiconductor nanocrystal preparation, can solve the problems of uneven quantum dot size, uneven coating process, and low quantum yield, and achieve high quantum yield, easy repeatability and Magnification, simple operation effect

Active Publication Date: 2021-12-31
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when this synthesis process coats the nanocrystalline core with a shell, the coating process is often uneven, and the quality of the shell is poor, so it cannot effectively grow on the surface of the nanocrystalline core. The obtained quantum dots Inhomogeneous size, large half-peak width, and low quantum yield

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  • A kind of preparation method of core-shell structure nanocrystal
  • A kind of preparation method of core-shell structure nanocrystal
  • A kind of preparation method of core-shell structure nanocrystal

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preparation example Construction

[0039] In order to solve the current problems of poor shell quality, uneven coating and inability to effectively grow on the surface of the nanocrystal core caused by the difficulty in fully reacting between the shell precursors of the nanocrystal, the invention discloses a nanocrystal with a core-shell structure. The preparation method, the specific preparation steps include:

[0040] forming a first solution having nuclei of nanocrystals; and

[0041] The first cation precursor, the second cation precursor and the anion precursor are added to the first solution, and the shell layer of the nanocrystal is coated on the surface of the crystal nucleus of the nanocrystal. Wherein, the reactivity of the first cationic precursor is different from that of the second cationic precursor.

[0042] In the process of forming the nanocrystal shell, the present invention adopts the method of adding two cationic precursors with different reactivity to fully react between the shell precurso...

Embodiment approach

[0057] According to a preferred embodiment of the present invention, the crystal nucleus of the nanocrystal includes at least one of indium phosphide and gallium phosphide, and the specific steps of "forming the first solution with the crystal nucleus of the nanocrystal" are: providing an indium precursor body or gallium precursor, and phosphorus precursor, make it react at a predetermined temperature to form a first solution with indium phosphide or gallium phosphide nano-crystal nucleus.

[0058] Further, the indium precursor is selected from at least one of indium acetate, indium chloride, indium carbonate, indium iodide, indium nitrate, indium bromide, indium perchlorate, indium myristate and indium stearate; The precursor includes at least one of gallium chloride, gallium nitrate, gallium acetate, gallium oxide, gallium oleate, gallium acetylacetonate and gallium stearate; the phosphorus precursor is selected from tri(dimethylamino)phosphine, tri( At least one of diethyla...

Embodiment 1

[0066] S1. Prepare the first solution with indium phosphide nanocrystal nuclei:

[0067] Add 100 mg of indium chloride and 10 mg of zinc chloride to 1-octadecene solution containing 5 mL of oleylamine ligand, heat to dissolve, add 0.5 mL of tris(dimethylamino)phosphine to it, and react for 30 min to form A first solution of indium phosphide nanocrystal nuclei.

[0068] S2, preparation of cationic precursor solution:

[0069] S2-1, preparation of the first cation precursor solution:

[0070] Add zinc chloride into the 1-octadecene solution containing oleylamine, heat until dissolved, and cool down to room temperature to obtain the first cationic precursor solution, which is set aside.

[0071] S2-2, preparation of the second cation precursor solution:

[0072] Dissolve zinc stearate in 1-octadecene solution, heat until dissolved, and cool down to room temperature to obtain the second cation precursor solution, which is set aside.

[0073] S3, prepare anion precursor solutio...

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Abstract

The invention provides a method for preparing a nanocrystal with a core-shell structure, comprising the steps of: forming a first solution with a crystal nucleus of a nanocrystal; adding a first cationic precursor, a second cationic precursor and an anionic precursor to the first solution body, the surface of the nanocrystal core is coated with a nanocrystal shell, wherein the reactivity of the first cation precursor and the second cation precursor are different. In the process of forming the nano crystal shell, the invention adds two cationic precursors with different reactivity to fully react between the shell precursors and realizes the perfect covering of the shell on the surface of the nano crystal core. The nanocrystal with core-shell structure obtained by the preparation method of the invention has small half-peak width and high quantum yield.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing semiconductor nanocrystals. Background technique [0002] Quantum dots are semiconductor luminescent nanocrystals composed of hundreds or thousands of atoms, with a physical diameter of 1-20nm, which have obvious quantum size effects and unique optical properties. In recent years, quantum dots have been widely used in flat panel displays, thin film flexible displays, LED lighting, fluorescent markers, and biomedical imaging due to their characteristics such as adjustable luminous wavelength, high luminous efficiency, and strong photochemical stability. One of the nanomaterials with potential and development prospects. Especially in the field of flat panel display, quantum dot technology can bring higher energy efficiency and color performance, while reducing costs, and has become the hottest trend in the high-end TV market. [0003] As th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/70
CPCC09K11/025C09K11/883
Inventor 张卫张孟段永杰
Owner SUZHOU XINGSHUO NANOTECH CO LTD