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44results about How to "Reduce half peak width" patented technology
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Raman spectrum based substance qualitative detection method
InactiveCN106645091AEliminates effects of fluorescence and other interfering factorsReduce characteristic peak widthRaman scatteringSpecial data processing applicationsFluorescenceQualitative property
The invention discloses a Raman spectrum based substance qualitative detection method, and relates to a substance qualitative detection method. The method comprises the following steps of S1, establishing a Raman normalized second-order spectrum library of a standard substance; S2, acquiring a mask threshold; S3, respectively establishing a spectrogram mask for each standard substance according to the Raman normalized second-order spectrum library of the standard substance and the mask threshold; and S4, judging the composition of the to-be-detected substance according to the spectrogram mask of the standard substance. The qualitative Raman spectrum library is established by using the spectrum second derivative-mask technology, the interference of fluorescence on judgement is eliminated through the processing of a second derivative, and the problem of Raman qualitativeness under the high fluorescence background is solved; and besides, the second derivative can effectively reduce the width of the characteristic peak, and the identification accuracy is improved. Database management and retrieval based on the spectrum second derivative-mask technology are more accurate, and the retrieval efficiency of the spectrum library is effectively improved.
Owner:西派特(北京)科技有限公司
Thermally activated delayed fluorescence luminescent material containing nitrogen hetero helicene parent nucleus and applications of thermally activated delayed fluorescence luminescent material in electroluminescent devices
ActiveCN110845517AAchieve launchSynthetic strongOrganic chemistrySolid-state devicesFluorescenceHeteroatom
The invention provides a thermally activated delayed fluorescence luminescent material constructed based on a nitrogen-containing hetero-helicene mother nucleus and applications of the thermally activated delayed fluorescence luminescent material in electroluminescent devices. The invention has the obvious characteristics that: 1) sulfonyl and carbonyl are very good acceptor units in TADF materials, but no sulfonyl and carbonyl double acceptor units exist in one TADF molecule at the same time; the helicene containing heteroatoms has a relatively large helical curvature; 2) directly construction of an MR-TADF material by utilizing the nitrogen hetero helicene parent nucleus is realized; 3) a TICT-TADF material is constructed by taking the nitrogen hetero helicene parent nucleus as a receptor unit, and hanging a donor unit at the periphery; and 4) the novel TADF (including MR-TADF and TICT-TADF) material can cover emission regions such as blue light, green light, red light-near infraredlight and even single-molecule white light. The nitrogen-containing hetero-helicene parent nucleus has the advantages of novel receptor, different TADF construction modes, wide color gamut and the like.
Owner:CHANGZHOU UNIV
Near-infrared flexible detector based on optical microcavity effect and preparation method thereof
InactiveCN111490167AImprove detection performanceReduce recombination lossSolid-state devicesSemiconductor/solid-state device manufacturingThin membranePhotodetection
The invention relates to the technical field of photoelectric detection, in particular to a near-infrared flexible detector based on an optical microcavity effect and a preparation method of the near-infrared flexible detector. The invention discloses the near-infrared flexible detector based on an optical microcavity effect. The detector comprises a glass substrate, a flexible substrate is attached to the glass substrate, a transparent conductive electrode ITO is plated on the flexible substrate, the transparent conductive electrode ITO is sequentially coated with an electron transport layer,an organic functional layer and a hole transport layer from bottom to top in a spinning manner, a metal electrode layer is plated on the hole transport layer, and the flexible substrate comprises a plastic substrate, a stainless steel substrate, an ultrathin glass substrate, a paper substrate and a biological composite film substrate. According to the near-infrared flexible detector, the problemof large half-wave peak width of an organic photoelectric detector is solved, and the problems of poor detection performance and no dynamic detection capability in a near-infrared band are also solved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Compound, display panel and display device
PendingCN110003258AReduces the orthosolvochromic effectHigh purity of luminous colorSilicon organic compoundsSolid-state devicesHydrogen atomAlkoxy group
The invention belongs to the technical field of OLED, and provides a compound with a structure shown in a formula (1), wherein D represents an electron donating group containing a nitrogen atom and isconnected to a benzene ring through the nitrogen atom, and A represents an electron accepting group containing a boron atom and is connected to the benzene ring through the boron atom; m and n are respectively selected from 1, 2 and 3; and R11, R12, R13 and R14 are respectively and independently selected from a hydrogen atom, an alkyl group, an alkoxy group, a cyano group, a trifluoromethyl group, the electron accepting group A' or the electron donating group D' containing the nitrogen atom. The compound adopts biphenyl as a connecting unit between the electron donating group D and the electron receiving group A, the D and the A achieve effective separation of HOMO and LUMO at different positions of molecules, and two physical processes of intramolecular charge transfer and space charge transfer can be simultaneously formed in the same molecule through connection of the biphenyl between the D and the A units, so that absorption of the molecules to light is improved, and the oscillatorstrength of the molecules is improved.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD
General formula compound and organic light-emitting device
ActiveCN109553606AGood planarityPrevent rotationSilicon organic compoundsSolid-state devicesBenzeneAryl
The present invention relates to a compound represented by the formula (I) shown in the specification. In the formula (I), A4 is selected from cyano or benzene cyano. A1, A2 and A3 are each independently represented by the formula (II) or (III) shown in the specification. In the formula (II) and formula (III), R1-R8 and R9-R16 are each independently selected from hydrogen, a C1-C10 alkyl group, asubstituted or unsubstituted C6-C30 aryl or fused ring aromatic hydrocarbon group, a substituted or unsubstituted C3-C30 heteroaryl or fused heterocyclic aromatic hydrocarbon group; and any adjacent two of the R1-R8 are optionally joined to a cyclic structure, any adjacent two of the R9-R16 are optionally joined to a cyclic structure; and when A1 is selected from the formula (II), at least one ofR1 to R8 in the formula (II) is hydrogen; when the A1 is selected from the formula (III), at least one of R9 to R16 in the formula (III) is hydrogen; in the formula (III), X is selected from the groupconsisting of oxygen, sulfur, imino, methylene, and silicylene. The invention further relates to an organic electroluminescent device employing the compound of the formula (I).
Owner:BEIJING ETERNAL MATERIAL TECH +1
Display panel and preparation method thereof
InactiveCN111430567AIncrease contrastReduce half peak widthSolid-state devicesSemiconductor/solid-state device manufacturingGamutThin membrane
The invention discloses a display panel and a preparation method thereof. The display panel comprises a thin film transistor structure layer; an OLED light emitting layer including an anode; a packaging layer arranged on the OLED light emitting layer; a color filter which is arranged on the packaging layer, and comprises a plurality of color resistance units and a black matrix surrounding the color resistance units; a flat layer which covers one side, far away from the packaging layer, of the color filter; and an antireflection layer which is arranged at one side, far away from the packaging layer, of the flat layer. The AR antireflection film layer is arranged on the packaging layer, so that the reflectivity of a 380-780nm waveband is reduced, the contrast ratio of a display panel pictureis improved, the color gamut of the display picture is improved, and the problem of visual color cast in a screen-off state is solved.
Owner:WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
InP quantum dot and preparation method thereof
InactiveCN109111921AEmission wavelength controllableReduce half peak widthNanoopticsLuminescent compositionsOrganic solventIndium
The invention provides an InP quantum dot and a preparation method thereof. The preparation method of the InP quantum dot comprises the following steps: S1, at the temperature of 100-150 DEG C, addingPH3 into a mixed system which contains an indium precursor, a first ligand and a first organic solvent to obtain nanometer crystal nucleus solution; S2, cooling the nanometer crystal nucleus solutionto 0-60 DEG C, and adding a second ligand to obtain nanometer crystal nucleus solution modified by the second ligand; S3, raising the temperature of the nanometer crystal nucleus solution modified bythe second ligand in the S2 to 200-300 DEG C, adding a precursor required by shell synthesis to obtain the InP quantum dot with the shell. Through the control of the precursor, the temperature, the first ligand, the second ligand and the like, the emission wavelength of the obtained InP quantum dot can be easily controlled, and in addition, the half-peak breadth of the InP quantum dot is smaller.
Owner:SUZHOU XINGSHUO NANOTECH CO LTD
Charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and fabrication method thereof
ActiveCN109904324AReduce recombination lossReduce half peak widthSolid-state devicesSemiconductor/solid-state device manufacturingElectron transmissionOptical detectors
The invention discloses a charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and a fabrication method thereof. The perovskite photoelectricdetector comprises a glass substrate, a first transparent conductive electrode layer, a first hole transmission layer, a perovskite sensitive layer a, a first electron transmission layer, a first holeblocking layer, a second transparent conductive electrode layer, a second hole transmission layer, a perovskite sensitive layer b, a second electron transmission layer, a second hole blocking layer,a third transparent conductive electrode layer, a third hole transmission layer, a perovskite sensitive layer c, a third electron transmission layer, a third hole blocking layer, a metal electrode layer. By the perovskite photoelectric detector, the half-wave peak width of the optical detector is effectively narrowed, the detection performance of the perovskite optical detector is improved, lightwaves of three different bands can be simultaneously detected, moreover, the fabrication method is simple and effective and is suitable for mass production.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and preparation method thereof and tellurium-cadmium-mercury liquid phase epitaxial growth method
PendingCN113782416AHigh hardnessImprove physical strengthSemiconductor/solid-state device manufacturingSemiconductor devicesPhysical chemistrySingle crystal
The invention discloses a tellurium-cadmium-mercury liquid phase epitaxial growth source substrate, which comprises a substrate body and a complex plating layer, wherein the complex plating layer is arranged on the substrate body, and a window for liquid phase epitaxial growth of tellurium-cadmium-mercury is arranged between the complex plating layer and the substrate body. The invention also discloses a preparation method of the tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and a tellurium-cadmium-mercury liquid phase epitaxial growth method based on the substrate. According to the invention, the substrate can effectively solve the problems that the temperature of each point on an interface is reduced and the heat conductivity coefficient of a transmission substrate material cannot well meet the requirement of temperature control conduction due to non-uniform temperature field before mother liquor is in contact with the substrate and in the epitaxial growth process of a tellurium-cadmium-mercury film; and the mercury-cadmium-mercury grown on the substrate in a liquid phase epitaxial manner has quite good thickness uniformity, surface smoothness, high single crystal property and relatively low half-peak width.
Owner:安徽光智科技有限公司
Cadmium-free quantum dot and preparation method thereof
ActiveCN111303882AImprove luminous efficiencyReduce half peak widthLuminescent compositionsPhysical chemistryQuantum dot
The invention provides a cadmium-free quantum dot and a preparation method thereof. The preparation method comprises the following steps: S1, mixing a first precursor, a first ligand and a solvent, and heating to a first temperature to obtain a first mixed solution; S2, mixing a second precursor, a second ligand and a solvent, and adding the first mixed solution at a second temperature to preparea second mixed solution; S3, heating the second mixed solution for a first time length to a third temperature, and keeping the temperature constant for a second time length at the third temperature; and S4, heating for a third time duration to a fourth temperature, and keeping the temperature constant for a fourth time duration at the fourth temperature to obtain the quantum dot core. According tothe method, the nucleation and the growth uniformity of quantum dots are controlled through a multi-gradient heating technology, so that the half-peak width of the cadmium-free quantum dot nucleus and the half-peak width of the quantum dots are reduced, and the luminous efficiency of the cadmium-free quantum dots is improved.
Owner:NANJING TECH CORP LTD
Organic compound containing condensed ring structure and organic electroluminescent device
ActiveCN111039800AReduce half peak widthHigh color purityOrganic chemistry methodsSolid-state devicesSimple Organic CompoundsOrganic electroluminescence
The invention provides an organic compound containing a condensed ring structure as shown in a formula I which is described in the specification. The invention also provides an application of the organic compound in an electroluminescent device. Compared with organic compounds in the prior art, the organic compound containing the condensed ring structure has a narrower half-peak width of an emission peak, so that the organic compound has excellent color purity; when the organic compound containing the condensed ring structure is applied to an AMOLED top emission screen body, higher luminous efficiency can be achieved, and an organic light-emitting device can have lower driving voltage and longer service lifetime.
Method for growing gallium nitride material on sapphire substrate, gallium nitride material and application thereof
ActiveCN107039250AFacilitate desorptionImprove crystal qualityLaser detailsSemiconductor/solid-state device manufacturingGallium nitrideOxygen
The invention belongs to the technical field of semiconductors, and relates to a method for growing gallium nitride material on a sapphire substrate, the grown gallium nitride material and application thereof. A first metal organic matter is piped into a reaction chamber in the process of heating the sapphire substrate so as to realize the effects that the oxygen atoms on the surface of the sapphire are enabled to be desorbed and metal atoms are deposited on the surface of the sapphire, and then gallium nitride is grown on the sapphire substrate so as to acquire the high-quality gallium nitride material. Compared with the gallium nitride material obtained through the conventional method, the half-peak width of the XRD (002) diffraction surface and the (102) diffraction surface of the grown gallium nitride material can be reduced for 10-80 arc seconds and 30-110 arc seconds respectively. Meanwhile, the process window of multiple subsequent steps of the gallium nitride material growth process can be increased by the method so that the method has wide application prospect.
Owner:TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED
Mask, manufacturing method thereof, array substrate and manufacturing method of array substrate
InactiveCN108919602AReduce half peak widthRealize thin line productionSolid-state devicesSemiconductor/solid-state device manufacturingRefractive indexEngineering
The invention provides a mask, a manufacturing method thereof, an array substrate and a manufacturing method of the array substrate. The manufacturing method of the mask comprises the steps that a substrate is provided, and the substrate comprises a first surface and a second surface which are arranged oppositely; a light shielding layer is formed on the first surface and comprises a plurality oflight shielding areas, and light transmitting areas are constituted between the adjacent light shielding areas; and convex lens structures are formed on the positions, corresponding to the light transmitting areas, of either of the first surface and the second surface, and the refractive index of the convex lens structure is greater than that of the substrate. Through the formed convex lens structure with the refractive index being greater than that of the substrate, light rays passing through the light transmitting areas can be gathered, thus the half-peak width of light is decreased, and thinning manufacturing of circuits in a routing area is achieved.
Owner:BOE TECH GRP CO LTD +1
Composite structure quantum dot, preparation method and use thereof
InactiveCN108485650AUnique structureReduce half peak widthNanotechnologyLuminescent compositionsQuantum yieldPhotovoltaic detectors
The invention provides a composite structure quantum dot, a preparation method and use thereof. The composite structure quantum dot comprises a core, a fluorescent layer coating on the surface of thecore and a passivation layer coating on the surface of the fluorescent layer, the core does not generate fluorescence with wavelengths in the visible range, and the fluorescent layer is a quantum dotmaterial layer. The preparation method comprises the following steps of 1) growing the fluorescent layer on the outer edge of the core surface to obtain an intermediate product; 2) coating the surfaceof the fluorescent layer of the intermediate product in step 1) with the passivation layer to obtain the composite structure quantum dot. The composite structure quantum dot is used in light emittingdevices, bioprobes or photodetectors. The composite structure quantum dot has unique structure, the half width is less than 50 nm, the fluorescence wavelength is controllable, the quantum yield is above 30%, and the dot is suitable for various fields; the preparation method has short process and simple operation, and the thickness of the fluorescence layer is precisely adjusted.
Owner:SHENZHEN PLANCK INNOVATION TECH CO LTD +1
Display substrate, manufacturing method thereof and display device
ActiveCN110048024AWide color gamutReduce half peak widthSolid-state devicesSemiconductor/solid-state device manufacturingElectricityGamut
The invention relates to a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The display substrate comprises a substrate body, an electroluminescent device layer arranged on the substrate body and a light absorption layer arranged on the light emitting side of the electroluminescent device layer, and the half-peak width of the emission spectrum of the electroluminescent device layer is larger than a target width threshold value; wherein the light absorption layer is configured to absorb light rays of a target wavelength, andthe difference value of the target wavelength and the peak wavelength of the emission spectrum is greater than a target difference value threshold value, so that the half-peak width of the emission spectrum of the display substrate is reduced. According to the invention, the display device has a wider color gamut.
Owner:BEIJING BOE TECH DEV CO LTD +1
Green silicate fluorescent powder with narrow half peak width and preparation method thereof
ActiveCN107312529ASmall distortionCrystal field changeLuminescent compositionsSemiconductor devicesAlcoholReducing atmosphere
The invention discloses green silicate fluorescent powder with a narrow half peak width. The silicate fluorescent powder has a general chemical formula of (M1xBa2-x-u-k)(SiyM21-y)O4:uMn<2+>, kM3<2+>, wherein M1 is at least one of Sr, Ca, Mg and Cu, M2 is at least one of Ti, Zr, Ge and Sn, and M3 is one of Eu, Sm and Yb; x is greater than 0 and less than or equal to 0.2, y is greater than 0.8 and less than 1.0, u is greater than 0.05 and less than or equal to 0.15, and k is greater than 0 and less than or equal to 0.05. The invention also discloses a preparation method comprising: weighing raw materials and a fluxing agent, and performing mixing and grinding to obtain a mixture; performing high-temperature sintering on the mixture in a reducing atmosphere, and performing crushing, screening, alcohol washing and drying on the sintered mixture after cooling to obtain the narrow-half-peak wide-green silicate fluorescent powder. The preparation method of the fluorescent powder provided by the invention is simple and easy to control, needs a low sintering temperature during preparation, has a wide process window, and is suitable for large-scale industrial production; the obtained fluorescent powder has a narrow half peak width and a small particle size, is uniform in distribution, narrow in distribution range, good in chemical stability and strong in resistance to heat and humidity, and can be widely applied to LED illumination or display systems.
Owner:HEBEI LIFU CHEM TECH
Boron-containing spiro compound and organic electroluminescent device
PendingCN113072572AReduce vibration couplingReduce relaxationSilicon organic compoundsSolid-state devicesOrganic electroluminescenceElectronic materials
The invention relates to the technical field of electronic materials, in particular to a boron-containing spiro compound and an organic electroluminescent device. The boron-containing spiro compound provided by the invention has a structure as shown in a formula I. The boron-containing spiro compound provided by the invention effectively improves the aggregation-induced fluorescence quenching effect caused by a rigid plane structure of a boron-nitrogen condensed ring and the defect that the half-peak width is increased due to aggregation, and reduces the half-peak width, so that in the process of increasing the doping ratio, the light-emitting property and the color purity of the device are not reduced but are improved to a certain extent.
Owner:SHENZHEN UNIV
Blue fluorescent powder and preparation method thereof
PendingCN112724976ASmall distortionStable structureLuminescent compositionsPhysical chemistryCrystal structure
The invention relates to blue fluorescent powder and a preparation method thereof, wherein the chemical general formula of the fluorescent powder is A1-xEuxBySi2O2N2+y, A is any one or two of Sr, Ca and Ba, B is any one or two of Al, Ga, In, Y and La, x is greater than or equal to 0.01 and less than 0.1, and y is greater than 0 and less than 0.1. The invention further discloses a preparation method of the fluorescent powder. According to the invention, a small amount of Al, Ga, In, Y and La elements are added into BaSi2O2N2 structure fluorescent powder, so that the wavelength of the fluorescent powder can be adjusted, the stability of a crystal structure and the nucleation consistency are improved, the brightness of the fluorescent powder is improved, and the damp-heat resistance of the fluorescent powder is improved; and according to the preparation method, a specific raw material treatment process and a sintering mode are applied, so that the uniformity and controllability of product particles are improved, meanwhile, the requirements on using equipment are reduced, and the production efficiency is improved.
Owner:HEBEI LIFU CHEM TECH
Differential ion mobility spectrometry-mass spectrometry combined device based on series connection of grounding electrode plates and application
ActiveCN111739781ALower jetImprove performanceGeneral water supply conservationSamples introduction/extractionDopantMass Spectrometry-Mass Spectrometry
The invention relates to a differential ion mobility spectrometry-mass spectrometry combined device based on series connection of grounding electrode plates and application, which belong to the fieldof analytical testing. The differential ion mobility spectrometry-mass spectrometry combined device comprises a sample injection system, a differential ion mobility spectrometry system and a mass spectrometer, wherein the differential ion mobility spectrometry system comprises a first electrode plate and a second electrode plate, and the front end of the first electrode plate or the second electrode plate is connected with the grounding electrode plate in an insulating manner. By adopting the front grounding electrode plate, the gas jet flow can be reduced, the speed dispersion effect can be reduced, and the differential ion migration-mass spectrometry combined overall performance can be improved under the condition that a doping agent is used.
Owner:SHANDONG ANALYSIS & TEST CENT
Quantum dot and preparation method thereof
PendingCN111748349AReduce half peak widthImprove quantum efficiencyMaterial nanotechnologyNanoopticsQuantum dotParticle physics
The invention relates to quantum dot and a preparation method thereof. The quantum dot is a multilayer shell quantum dot comprising a core comprising a IIIA-IIB-VA compound, a first shell layer disposed over the core and comprising a IIIA-VA compound, a second shell layer disposed over the first shell layer and comprising a first IIB-VIA compound, and a third shell layer disposed over the second shell layer and comprising a second IIB-VIA compound.
Owner:TOMI CHENGDU APPLIED TECH RES INST CO LTD
Compound, luminescent material, organic light-emitting display panel, and organic light-emitting display device
ActiveCN110054643BEfficient separationAppropriate degree of overlapGroup 4/14 element organic compoundsGroup 5/15 element organic compoundsDisplay deviceOrganic chemistry
The present invention relates to a compound, a luminescent material, an organic light-emitting display panel and an organic light-emitting display device. The compound has a structure shown in Chemical Formula I; the luminescent material includes any one or at least two combinations of the compounds, The organic light-emitting display panel includes an anode, a cathode, and an organic layer located between the anode and the cathode; the material of the organic layer includes any one or a combination of at least two of the compounds; the The organic light emitting display device includes the organic light emitting display panel. ΔE of the compounds provided by the invention st ≤0.30eV, when used in an organic light-emitting display panel, it can further improve the luminous efficiency of the device.
Owner:TIANMA MICRO ELECTRONICS CO LTD
A reflective PETE solar photoelectric conversion method and a conversion device thereof
ActiveCN109065645AReduce cooling rateIncreased launch chanceMaterial nanotechnologyNanoopticsNanowireBonding process
The invention discloses a reflective PETE solar photoelectric conversion method and a conversion device thereof, A material of the cathode and the anode are placed in a vacuum environment, the sunlight is directly irradiated on the front of the cathode material after the sunlight is condensed by the condensing device, the cathode material absorbs the condensed sunlight to generate a large number of hot electrons, and the hot electrons are emitted into a vacuum and then are collected by the anode material to form a photocurrent; Based on the reflective PETE solar photovoltaic conversion method,a reflective PETE solar photovoltaic conversion device is designed according to the reflective PETE solar photovoltaic conversion method. A large number of hot electrons can be generated by absorbingand converging sunlight with an InN nanowire cathode, The photoelectric current is generated after the hot electrons are emitted into the vacuum and then collected by the anode, which avoids the complex bonding process of the transmission cathode, and at the same time, the textured nanostructure can be prepared on the surface of the cathode, the absorption of sunlight by the cathode is increased,and the photoelectric conversion efficiency is effectively improved.
Owner:GUANGXI UNIV
Core-shell structure nano crystal and preparation method thereof
PendingCN111548786AReduce half peak widthExtend the ripening timeMaterial nanotechnologyPolycrystalline material growthMaterials scienceChemical engineering
The invention discloses a core-shell structure nano crystal and a preparation method thereof. The preparation method of the core-shell structure nano crystal comprises the following steps: adding precursors for synthesizing a transition layer into a reaction system containing a nano crystal nucleus so as to coat the surface of the nano crystal nucleus with a transition layer; and coating the surface of the transition layer with an outer shell layer to obtain the core-shell structure nano crystal, wherein there are at least two precursors for synthesizing the transition layer, the precursors are added in a staged gradient heating mode, which comprises at least two temperature steps; and the precursors react on each temperature step to generate a part of the transition layer. Due to the factthat the transition layer is synthesized at different temperature steps, each part of the transition layer is cured for a long term after being synthesized, the finally synthesized transition layer of the nano crystal is more uniform, and the half-peak width of the nano crystal is remarkably reduced.
Owner:SUZHOU XINGSHUO NANOTECH CO LTD
Resonance wavelength determination method of surface electromagnetic mode resonance hyperspectral imaging sensor
ActiveCN112525862AUndisturbedEliminate errorsRadiation pyrometryAbsorption/flicker/reflection spectroscopyResonance wavelengthResonance spectrum
The invention discloses a resonance wavelength determination method of a surface electromagnetic mode resonance hyperspectral imaging sensor. The method comprises the following steps of: measuring anemission spectrum original curve of a broadband light source and a resonance spectrum original curve of a surface electromagnetic mode resonance structure by using a hyperspectral imager; converting the emission spectrum original curve into an emission spectrum radiance curve, converting the resonance spectrum original curve into a resonance spectrum radiance curve, enabling the resonance spectrumradiance curve to comprise a resonance absorption curve segment and a non-resonance curve segment; taking the emission spectrum radiance curve as a fitting model, carrying out overall fitting on thenon-resonance curve segment in the resonance spectrum radiance curve, so as to obtain a radiance optimal fitting curve of the sensor in the absence of resonance absorption; dividing the resonance spectrum radiance curve by the radiance optimal fitting curve to obtain a reflectivity spectrum curve; and fitting a resonance absorption valley in the reflectivity spectrum curve to determine a resonancewavelength. With the method adopted, the resonance wavelength can be accurately calculated, and the quality factor of the sensor is improved.
Owner:AEROSPACE INFORMATION RES INST CAS +1
Semiconductor nanoparticles, dispersion of semiconductor nanoparticles, and optical member
PendingCN113454020AImprove quantum efficiencyReduce half peak widthOptical filtersNanoopticsSemiconductor NanoparticlesOrganic chemistry
The present invention relates to semiconductor nanoparticles. The semiconductor nanoparticles are core / shell type semiconductor nanoparticles each comprising a core including In and P and one or more shell layers, characterized in that the semiconductor nanoparticles further contain at least Zn, Se, and a halogen and that in the semiconductor nanoparticles, the molar ratios of the P, Zn, Se, and halogen to the In, in terms of atomic amount, are: P, 0.20-0.95; Zn, 11.00-50.00; Se, 7.00-25.00; and halogen, 0.80-15.00. According to the invention, it is possible to provide semiconductor nanoparticles which are core / shell type semiconductor nanoparticles each comprising a core including In and P and a shell comprising Zn and Se as main components and which have a high quantum efficiency, a small half band width, and a small Stokes shift.
Owner:SHOEI CHEM IND CO LTD
Optically pumped resonance enhanced flip-chip red LED device and preparation method thereof
ActiveCN108133992BThe production process is simpleSimple processSemiconductor devicesResonant cavityElectricity
The invention discloses an optical pump resonant enhanced inverted infrared LED device and a fabrication method thereof. The device comprises an infrared LED quantum-well structure and an inverted blue-light LED chip, wherein the infrared LED quantum-well structure is provided with a resonant cavity, an emergent surface of the inverted blue-light LED chip is bonded with an incident surface of theinfrared LED quantum-well structure, and the infrared LED quantum-well structure is simulated by blue-light photons emitted from the inverted blue-light LED chip so that the infrared LED quantum-wellstructure emits out red-light photons. In the device, the inverted red-light LED device absorbs photons emitted from the blue-light LED chip to give out light by an optical pump rather than traditional electrical injection light emitting, a traditional inverted red-light LED complicated epitaxial growth process and a chip fabrication process are prevented, the process complexity is reduced, the device reliability is improved, and the chip manufacturing process is shortened.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
A method for enhancing the photoluminescence signal of antimony-based superlattice materials
ActiveCN112510113BIncrease strainAdjust strainFinal product manufactureSemiconductor devicesMaterials scienceAtomic physics
The invention discloses a method for enhancing the photoluminescent signal of an antimony-based superlattice material, comprising: pretreating a GaSb substrate to remove water vapor and organic matter; raising the temperature of the GaSb substrate to remove the oxide layer of the GaSb substrate at high temperature; Cool the GaSb substrate and grow a GaSb buffer layer on the GaSb substrate; heat up the GaSb buffer layer and then anneal; cool down the GaSb buffer layer, and control the growth temperature, growth rate, beam current ratio and growth interface on the GaSb buffer layer Growing the Sb-based superlattice material; growing the GaSb layer on the surface of the Sb-based superlattice material, cooling the Sb-based superlattice material. In the present invention, by performing a photoluminescence test on the Sb-based superlattice material, the photoluminescent signal is greatly enhanced, the peak position of the luminescence is clear, and the half-peak width is small, and the band gap of the superlattice material can be accurately tested, so that the Sb-based superlattice Lattice materials can be widely used in infrared optoelectronic devices to improve the detection accuracy of infrared optoelectronic devices.
Owner:11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
A reflective pete solar photoelectric conversion method and conversion device thereof
ActiveCN109065645BReduce cooling rateIncreased launch chanceMaterial nanotechnologyNanoopticsNanowireNano structuring
Owner:GUANGXI UNIV
Display panel, manufacturing method thereof and display terminal
PendingCN114203790AImprove color gamutReduce blue light componentsSolid-state devicesSemiconductor/solid-state device manufacturingEngineeringHigh color
The embodiment of the invention provides a display panel, a manufacturing method thereof and a display terminal, a light-emitting device layer comprises a red light-emitting device, a first blue light-emitting device and a second blue light-emitting device, a red color resistor is arranged corresponding to the red light-emitting device, a blue color resistor is arranged corresponding to the first blue light-emitting device, and a second color resistor is arranged corresponding to the second blue light-emitting device. The green color conversion unit is arranged corresponding to the second blue light-emitting device, the green color conversion unit is used for converting light emitted by the second blue light-emitting device into green light, the blue light component in the green light generated by the green color conversion unit is reduced, the half-peak width of the green light is reduced, the color gamut of the organic light-emitting display panel can be improved, and the display effect of the organic light-emitting display panel is improved. Therefore, the organic light-emitting display panel with the ultra-high color gamut is realized.
Owner:WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Thermally activated delayed fluorescent material constructed based on nitrogen-containing heteroaromatic ring derivative and carbonyl and application of thermally activated delayed fluorescent material
ActiveCN113980019AEasy to synthesizeStable structureOrganic chemistrySolid-state devicesAcridineCarbazole
The invention belongs to the field of organic light-emitting materials, and particularly discloses a thermally activated delayed fluorescent material constructed based on a nitrogen-containing heteroaromatic ring derivative and carbonyl and application of the thermally activated delayed fluorescent material. The material has the remarkable characteristics that: (1) a push-pull electron effect exists between nitrogen atoms and carbonyl, so that the material can be directly used for constructing a multi-resonance thermally activated delayed fluorescent material; and (2) the half-peak width and the luminescence peak value of the molecule can be regulated and controlled through the intensity of the electron donating group, so that blue-green-red light emission regions are covered; and (3) the material can also be used as an acceptor parent nucleus, and a donor unit (one of carbazolyl, substituted carbazolyl, phenothiazinyl, substituted phenothiazinyl, phenazinyl, substituted phenazinyl, acridine and substituted acridinyl) is hung in the periphery to construct a TICT-TADF material.
Owner:CHANGZHOU UNIV
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