44results about How to "Reduce half peak width" patented technology

The invention discloses a Raman spectrum based substance qualitative detection method, and relates to a substance qualitative detection method. The method comprises the following steps of S1, establishing a Raman normalized second-order spectrum library of a standard substance; S2, acquiring a mask threshold; S3, respectively establishing a spectrogram mask for each standard substance according to the Raman normalized second-order spectrum library of the standard substance and the mask threshold; and S4, judging the composition of the to-be-detected substance according to the spectrogram mask of the standard substance. The qualitative Raman spectrum library is established by using the spectrum second derivative-mask technology, the interference of fluorescence on judgement is eliminated through the processing of a second derivative, and the problem of Raman qualitativeness under the high fluorescence background is solved; and besides, the second derivative can effectively reduce the width of the characteristic peak, and the identification accuracy is improved. Database management and retrieval based on the spectrum second derivative-mask technology are more accurate, and the retrieval efficiency of the spectrum library is effectively improved.

The invention relates to the technical field of photoelectric detection, in particular to a near-infrared flexible detector based on an optical microcavity effect and a preparation method of the near-infrared flexible detector. The invention discloses the near-infrared flexible detector based on an optical microcavity effect. The detector comprises a glass substrate, a flexible substrate is attached to the glass substrate, a transparent conductive electrode ITO is plated on the flexible substrate, the transparent conductive electrode ITO is sequentially coated with an electron transport layer,an organic functional layer and a hole transport layer from bottom to top in a spinning manner, a metal electrode layer is plated on the hole transport layer, and the flexible substrate comprises a plastic substrate, a stainless steel substrate, an ultrathin glass substrate, a paper substrate and a biological composite film substrate. According to the near-infrared flexible detector, the problemof large half-wave peak width of an organic photoelectric detector is solved, and the problems of poor detection performance and no dynamic detection capability in a near-infrared band are also solved.

The invention belongs to the technical field of OLED, and provides a compound with a structure shown in a formula (1), wherein D represents an electron donating group containing a nitrogen atom and isconnected to a benzene ring through the nitrogen atom, and A represents an electron accepting group containing a boron atom and is connected to the benzene ring through the boron atom; m and n are respectively selected from 1, 2 and 3; and R11, R12, R13 and R14 are respectively and independently selected from a hydrogen atom, an alkyl group, an alkoxy group, a cyano group, a trifluoromethyl group, the electron accepting group A' or the electron donating group D' containing the nitrogen atom. The compound adopts biphenyl as a connecting unit between the electron donating group D and the electron receiving group A, the D and the A achieve effective separation of HOMO and LUMO at different positions of molecules, and two physical processes of intramolecular charge transfer and space charge transfer can be simultaneously formed in the same molecule through connection of the biphenyl between the D and the A units, so that absorption of the molecules to light is improved, and the oscillatorstrength of the molecules is improved.

The invention discloses a display panel and a preparation method thereof. The display panel comprises a thin film transistor structure layer; an OLED light emitting layer including an anode; a packaging layer arranged on the OLED light emitting layer; a color filter which is arranged on the packaging layer, and comprises a plurality of color resistance units and a black matrix surrounding the color resistance units; a flat layer which covers one side, far away from the packaging layer, of the color filter; and an antireflection layer which is arranged at one side, far away from the packaging layer, of the flat layer. The AR antireflection film layer is arranged on the packaging layer, so that the reflectivity of a 380-780nm waveband is reduced, the contrast ratio of a display panel pictureis improved, the color gamut of the display picture is improved, and the problem of visual color cast in a screen-off state is solved.

The invention discloses a charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and a fabrication method thereof. The perovskite photoelectricdetector comprises a glass substrate, a first transparent conductive electrode layer, a first hole transmission layer, a perovskite sensitive layer a, a first electron transmission layer, a first holeblocking layer, a second transparent conductive electrode layer, a second hole transmission layer, a perovskite sensitive layer b, a second electron transmission layer, a second hole blocking layer,a third transparent conductive electrode layer, a third hole transmission layer, a perovskite sensitive layer c, a third electron transmission layer, a third hole blocking layer, a metal electrode layer. By the perovskite photoelectric detector, the half-wave peak width of the optical detector is effectively narrowed, the detection performance of the perovskite optical detector is improved, lightwaves of three different bands can be simultaneously detected, moreover, the fabrication method is simple and effective and is suitable for mass production.

The invention discloses a tellurium-cadmium-mercury liquid phase epitaxial growth source substrate, which comprises a substrate body and a complex plating layer, wherein the complex plating layer is arranged on the substrate body, and a window for liquid phase epitaxial growth of tellurium-cadmium-mercury is arranged between the complex plating layer and the substrate body. The invention also discloses a preparation method of the tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and a tellurium-cadmium-mercury liquid phase epitaxial growth method based on the substrate. According to the invention, the substrate can effectively solve the problems that the temperature of each point on an interface is reduced and the heat conductivity coefficient of a transmission substrate material cannot well meet the requirement of temperature control conduction due to non-uniform temperature field before mother liquor is in contact with the substrate and in the epitaxial growth process of a tellurium-cadmium-mercury film; and the mercury-cadmium-mercury grown on the substrate in a liquid phase epitaxial manner has quite good thickness uniformity, surface smoothness, high single crystal property and relatively low half-peak width.

The invention provides an organic compound containing a condensed ring structure as shown in a formula I which is described in the specification. The invention also provides an application of the organic compound in an electroluminescent device. Compared with organic compounds in the prior art, the organic compound containing the condensed ring structure has a narrower half-peak width of an emission peak, so that the organic compound has excellent color purity; when the organic compound containing the condensed ring structure is applied to an AMOLED top emission screen body, higher luminous efficiency can be achieved, and an organic light-emitting device can have lower driving voltage and longer service lifetime.

The invention belongs to the technical field of semiconductors, and relates to a method for growing gallium nitride material on a sapphire substrate, the grown gallium nitride material and application thereof. A first metal organic matter is piped into a reaction chamber in the process of heating the sapphire substrate so as to realize the effects that the oxygen atoms on the surface of the sapphire are enabled to be desorbed and metal atoms are deposited on the surface of the sapphire, and then gallium nitride is grown on the sapphire substrate so as to acquire the high-quality gallium nitride material. Compared with the gallium nitride material obtained through the conventional method, the half-peak width of the XRD (002) diffraction surface and the (102) diffraction surface of the grown gallium nitride material can be reduced for 10-80 arc seconds and 30-110 arc seconds respectively. Meanwhile, the process window of multiple subsequent steps of the gallium nitride material growth process can be increased by the method so that the method has wide application prospect.

The invention relates to a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The display substrate comprises a substrate body, an electroluminescent device layer arranged on the substrate body and a light absorption layer arranged on the light emitting side of the electroluminescent device layer, and the half-peak width of the emission spectrum of the electroluminescent device layer is larger than a target width threshold value; wherein the light absorption layer is configured to absorb light rays of a target wavelength, andthe difference value of the target wavelength and the peak wavelength of the emission spectrum is greater than a target difference value threshold value, so that the half-peak width of the emission spectrum of the display substrate is reduced. According to the invention, the display device has a wider color gamut.

The invention relates to the technical field of electronic materials, in particular to a boron-containing spiro compound and an organic electroluminescent device. The boron-containing spiro compound provided by the invention has a structure as shown in a formula I. The boron-containing spiro compound provided by the invention effectively improves the aggregation-induced fluorescence quenching effect caused by a rigid plane structure of a boron-nitrogen condensed ring and the defect that the half-peak width is increased due to aggregation, and reduces the half-peak width, so that in the process of increasing the doping ratio, the light-emitting property and the color purity of the device are not reduced but are improved to a certain extent.

The invention relates to blue fluorescent powder and a preparation method thereof, wherein the chemical general formula of the fluorescent powder is A1-xEuxBySi2O2N2+y, A is any one or two of Sr, Ca and Ba, B is any one or two of Al, Ga, In, Y and La, x is greater than or equal to 0.01 and less than 0.1, and y is greater than 0 and less than 0.1. The invention further discloses a preparation method of the fluorescent powder. According to the invention, a small amount of Al, Ga, In, Y and La elements are added into BaSi2O2N2 structure fluorescent powder, so that the wavelength of the fluorescent powder can be adjusted, the stability of a crystal structure and the nucleation consistency are improved, the brightness of the fluorescent powder is improved, and the damp-heat resistance of the fluorescent powder is improved; and according to the preparation method, a specific raw material treatment process and a sintering mode are applied, so that the uniformity and controllability of product particles are improved, meanwhile, the requirements on using equipment are reduced, and the production efficiency is improved.

The invention relates to a differential ion mobility spectrometry-mass spectrometry combined device based on series connection of grounding electrode plates and application, which belong to the fieldof analytical testing. The differential ion mobility spectrometry-mass spectrometry combined device comprises a sample injection system, a differential ion mobility spectrometry system and a mass spectrometer, wherein the differential ion mobility spectrometry system comprises a first electrode plate and a second electrode plate, and the front end of the first electrode plate or the second electrode plate is connected with the grounding electrode plate in an insulating manner. By adopting the front grounding electrode plate, the gas jet flow can be reduced, the speed dispersion effect can be reduced, and the differential ion migration-mass spectrometry combined overall performance can be improved under the condition that a doping agent is used.

The invention relates to quantum dot and a preparation method thereof. The quantum dot is a multilayer shell quantum dot comprising a core comprising a IIIA-IIB-VA compound, a first shell layer disposed over the core and comprising a IIIA-VA compound, a second shell layer disposed over the first shell layer and comprising a first IIB-VIA compound, and a third shell layer disposed over the second shell layer and comprising a second IIB-VIA compound.

The present invention relates to a compound, a luminescent material, an organic light-emitting display panel and an organic light-emitting display device. The compound has a structure shown in Chemical Formula I; the luminescent material includes any one or at least two combinations of the compounds, The organic light-emitting display panel includes an anode, a cathode, and an organic layer located between the anode and the cathode; the material of the organic layer includes any one or a combination of at least two of the compounds; the The organic light emitting display device includes the organic light emitting display panel. ΔE of the compounds provided by the invention _st ≤0.30eV, when used in an organic light-emitting display panel, it can further improve the luminous efficiency of the device.

The invention discloses a core-shell structure nano crystal and a preparation method thereof. The preparation method of the core-shell structure nano crystal comprises the following steps: adding precursors for synthesizing a transition layer into a reaction system containing a nano crystal nucleus so as to coat the surface of the nano crystal nucleus with a transition layer; and coating the surface of the transition layer with an outer shell layer to obtain the core-shell structure nano crystal, wherein there are at least two precursors for synthesizing the transition layer, the precursors are added in a staged gradient heating mode, which comprises at least two temperature steps; and the precursors react on each temperature step to generate a part of the transition layer. Due to the factthat the transition layer is synthesized at different temperature steps, each part of the transition layer is cured for a long term after being synthesized, the finally synthesized transition layer of the nano crystal is more uniform, and the half-peak width of the nano crystal is remarkably reduced.

The invention discloses a resonance wavelength determination method of a surface electromagnetic mode resonance hyperspectral imaging sensor. The method comprises the following steps of: measuring anemission spectrum original curve of a broadband light source and a resonance spectrum original curve of a surface electromagnetic mode resonance structure by using a hyperspectral imager; converting the emission spectrum original curve into an emission spectrum radiance curve, converting the resonance spectrum original curve into a resonance spectrum radiance curve, enabling the resonance spectrumradiance curve to comprise a resonance absorption curve segment and a non-resonance curve segment; taking the emission spectrum radiance curve as a fitting model, carrying out overall fitting on thenon-resonance curve segment in the resonance spectrum radiance curve, so as to obtain a radiance optimal fitting curve of the sensor in the absence of resonance absorption; dividing the resonance spectrum radiance curve by the radiance optimal fitting curve to obtain a reflectivity spectrum curve; and fitting a resonance absorption valley in the reflectivity spectrum curve to determine a resonancewavelength. With the method adopted, the resonance wavelength can be accurately calculated, and the quality factor of the sensor is improved.

The present invention relates to semiconductor nanoparticles. The semiconductor nanoparticles are core/shell type semiconductor nanoparticles each comprising a core including In and P and one or more shell layers, characterized in that the semiconductor nanoparticles further contain at least Zn, Se, and a halogen and that in the semiconductor nanoparticles, the molar ratios of the P, Zn, Se, and halogen to the In, in terms of atomic amount, are: P, 0.20-0.95; Zn, 11.00-50.00; Se, 7.00-25.00; and halogen, 0.80-15.00. According to the invention, it is possible to provide semiconductor nanoparticles which are core/shell type semiconductor nanoparticles each comprising a core including In and P and a shell comprising Zn and Se as main components and which have a high quantum efficiency, a small half band width, and a small Stokes shift.

The invention belongs to the field of organic light-emitting materials, and particularly discloses a thermally activated delayed fluorescent material constructed based on a nitrogen-containing heteroaromatic ring derivative and carbonyl and application of the thermally activated delayed fluorescent material. The material has the remarkable characteristics that: (1) a push-pull electron effect exists between nitrogen atoms and carbonyl, so that the material can be directly used for constructing a multi-resonance thermally activated delayed fluorescent material; and (2) the half-peak width and the luminescence peak value of the molecule can be regulated and controlled through the intensity of the electron donating group, so that blue-green-red light emission regions are covered; and (3) the material can also be used as an acceptor parent nucleus, and a donor unit (one of carbazolyl, substituted carbazolyl, phenothiazinyl, substituted phenothiazinyl, phenazinyl, substituted phenazinyl, acridine and substituted acridinyl) is hung in the periphery to construct a TICT-TADF material.