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Composite structure quantum dot, preparation method and use thereof

A composite structure, quantum dot technology, applied in chemical instruments and methods, luminescent materials, nanotechnology, etc., can solve the problems of the half-peak width of III-V quantum dots, reduce the use value, etc., and achieve simple operation and short process. Effect

Inactive Publication Date: 2018-09-04
SHENZHEN PLANCK INNOVATION TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] In the methods provided by the above two patents, there is a wide half-width ratio of the synthesized III-V quantum dots, which reduces the shortage of its use value

Method used

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  • Composite structure quantum dot, preparation method and use thereof
  • Composite structure quantum dot, preparation method and use thereof
  • Composite structure quantum dot, preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0085] The preparation method of the composite structure quantum dot provided in this embodiment is as follows:

[0086] (1) To SiO with uniform particle size distribution 2 Add 0.34mmol InCl to core 1 3 , 2.2 mmol ZnI 2 and 5ml oleylamine, heated to 140°C and vacuumed for 1h, heated to 200°C under argon atmosphere, and added 2.4mmol (DMA) dropwise using a syringe pump 3 The mixture of P and 1ml oleylamine was reacted for 20min to obtain the intermediate product.

[0087] (2) Heating the intermediate product in step (1) to 300° C., adding 1 ml of selenium precursor dropwise, reacting for 5 minutes, adding 0.65 ml of zinc precursor dropwise, and reacting for 10 minutes to obtain the composite structure quantum dots.

[0088] Among them, the SiO 2 The preparation method of core 1 is as follows: using silicon tetrachloride as raw material, silicon tetrachloride gas is used to hydrolyze silicon tetrachloride gas under high temperature of hydrogen and oxygen flow to obtain smok...

Embodiment 2

[0096] The preparation method of the composite structure quantum dot provided in this embodiment is as follows:

[0097] (1) To SiO with uniform particle size distribution 2 Add 0.34mmol InCl to core 1 3 , 2.2 mmol ZnI 2 and 5ml oleylamine, heated to 140°C and vacuumed for 1h, heated to 200°C under argon atmosphere, and added 2.4mmol (DMA) dropwise using a syringe pump 3 The mixture of P and 1ml oleylamine was reacted for 20min to obtain the intermediate product.

[0098] (2) Heating the intermediate product in step (1) to 300° C., adding 0.28 mmol dodecanethiol dropwise, reacting for 5 minutes, adding 0.65 ml zinc precursor dropwise, and reacting for 10 minutes to obtain the composite structure quantum dots.

[0099] Among them, the SiO 2 The preparation method of core 1 is as follows: using silicon tetrachloride as raw material, silicon tetrachloride gas is used to hydrolyze silicon tetrachloride gas under high temperature of hydrogen and oxygen flow to obtain smoky sili...

Embodiment 3

[0105] The preparation method of the composite structure quantum dot provided in this embodiment is as follows:

[0106] (1) Add 0.3mmol InCl to polystyrene core 1 with uniform particle size distribution 3 , 2 mmol ZnI 2 and 4.5ml of oleylamine, heated to 120°C and evacuated for 0.75h, heated to 180°C under argon atmosphere, and added 2mmol (DMA) dropwise using a syringe pump 3 The mixture of P and 1ml oleylamine was reacted for 25min to obtain the intermediate product.

[0107] (2) Heating the intermediate product in step (1) to 280° C., adding 0.28 mmol dodecanethiol dropwise, reacting for 4 minutes, adding 0.65 ml zinc precursor dropwise, and reacting for 8 minutes to obtain the composite structure quantum dots.

[0108] The preparation method of the zinc precursor is as follows: add 6mmol ZnO, 18mmol oleic acid, and 14ml paraffin oil into a three-necked flask, and heat it to 300°C under an argon atmosphere, and the obtained colorless and transparent liquid is the zinc pr...

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Abstract

The invention provides a composite structure quantum dot, a preparation method and use thereof. The composite structure quantum dot comprises a core, a fluorescent layer coating on the surface of thecore and a passivation layer coating on the surface of the fluorescent layer, the core does not generate fluorescence with wavelengths in the visible range, and the fluorescent layer is a quantum dotmaterial layer. The preparation method comprises the following steps of 1) growing the fluorescent layer on the outer edge of the core surface to obtain an intermediate product; 2) coating the surfaceof the fluorescent layer of the intermediate product in step 1) with the passivation layer to obtain the composite structure quantum dot. The composite structure quantum dot is used in light emittingdevices, bioprobes or photodetectors. The composite structure quantum dot has unique structure, the half width is less than 50 nm, the fluorescence wavelength is controllable, the quantum yield is above 30%, and the dot is suitable for various fields; the preparation method has short process and simple operation, and the thickness of the fluorescence layer is precisely adjusted.

Description

technical field [0001] The invention belongs to the technical field of nano-luminescent materials, and relates to a quantum dot with a composite structure and a preparation method and application thereof. Background technique [0002] Quantum dots are inorganic semiconductor nanocrystals with a diameter of less than 10nm. When the particle size is smaller than or close to the exciton Bohr radius, quantum size effects will appear, that is, as the size of quantum dots gradually decreases, the spectrum of quantum dots will appear blue. shift phenomenon. The smaller the size, the more pronounced the blue shift phenomenon. Therefore, by controlling the size of quantum dots, the width of its energy gap can be adjusted conveniently, thereby controlling the color of the emitted light. [0003] At present, the preparation of II-VI group and alloy structure quantum dots has been very mature, and its half-peak width can reach about 20nm, and the quantum yield can reach more than 80%....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70B82Y40/00
CPCB82Y40/00C09K11/025C09K11/70
Inventor 孙小卫张文达王恺瞿祥炜张超键刘皓宸
Owner SHENZHEN PLANCK INNOVATION TECH CO LTD
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