Cadmium-free quantum dot and preparation method thereof

A technology for quantum dots and precursors, which is applied to the field of cadmium-free quantum dots and their preparation, can solve the problems of low luminous efficiency and large luminescence half-peak width, and achieves the effects of improving luminous efficiency and reducing half-peak width.

Active Publication Date: 2020-06-19
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a cadmium-free quantum dot and its preparation method to solve the problems of low luminous efficiency and large luminous half-peak width of cadmium-free quantum dots in the prior art

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  • Cadmium-free quantum dot and preparation method thereof
  • Cadmium-free quantum dot and preparation method thereof
  • Cadmium-free quantum dot and preparation method thereof

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preparation example Construction

[0025] As described in the background art, the cadmium-free quantum dots in the prior art have low luminous efficiency and large luminous half-peak width. In order to solve the above technical problems, the present invention provides a preparation method of cadmium-free quantum dots, such as figure 1 As shown in the figure, the following steps are included: S1, mixing the first precursor, the first ligand and the solvent, and heating to a first temperature to obtain a first mixed solution; S2, mixing the second precursor, the second ligand and the solvent , adding the first mixed solution at the second temperature to obtain the second mixed solution; S3, heating the second mixed solution for a first time length to a third temperature, and maintaining a constant temperature at the third temperature for a second time length; S4, Heating for a third period of time to a fourth temperature, and constant temperature at the fourth temperature for a fourth period of time, prepares qua...

Embodiment 1

[0047] The preparation method of the present embodiment comprises the following steps:

[0048] First, weigh 0.2 mmol In(Ac) 3 (Indium acetate), 0.6 mmol OA (oleic acid), 5.0 g ODE (octadecene), were added to a 100 mL three-necked flask, N 2 Heating to 170 ℃ in the exhaust state to dissolve, and then cooling to room temperature.

[0049] Then, a mixed solution of 0.1 mmol of TMS-P (tris(trimethylsilyl)phosphine), 0.5 mL of TOP, and 0.5 mL of ODE (octadecene) was added to the above solution at room temperature.

[0050] Next, heat from room temperature (25°C) to 150°C over a period of 5 minutes, and maintain a constant temperature for 2 minutes; then heat to 300°C for 5 minutes, and perform a constant temperature reaction for 2 minutes to obtain an InP core solution.

[0051] Finally, the reaction temperature was lowered to 150 °C and 1.5 mmol of ZnAc was added 2 (zinc acetate), exhaust for 30min, heat up to 280°C, add 1mL Se-TOP (0.1mmol / mL) (selenium-trioctylphosphine) to ...

Embodiment 2

[0053] The preparation method of the present embodiment comprises the following steps:

[0054] First, weigh 0.2 mmol In(Ac) 3 (Indium acetate), 0.6 mmol OA (oleic acid), 5.0 g ODE (octadecene), were added to a 100 mL three-necked flask, N 2 Heating to 170 ℃ in the exhaust state to dissolve, and then cooling to room temperature.

[0055] Then, a mixed solution of 0.1 mmol of TMS-P (tris(trimethylsilyl)phosphine), 0.5 mL of TOP, and 0.5 mL of ODE (octadecene) was added to the above solution at room temperature.

[0056] Next, heat from room temperature to 85°C over a period of 10 minutes, and maintain a constant temperature for 5 minutes; then heat to 150°C for 10 minutes, then heat to 300°C for 5 minutes, and react at a constant temperature for 2 minutes to obtain an InP core solution.

[0057] Finally, the reaction temperature was lowered to 150 °C and 1.5 mmol of ZnAc was added 2 (zinc acetate), exhaust for 30min, heat up to 280°C, add 1mL Se-TOP (0.1mmol / mL) (selenium-tr...

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Abstract

The invention provides a cadmium-free quantum dot and a preparation method thereof. The preparation method comprises the following steps: S1, mixing a first precursor, a first ligand and a solvent, and heating to a first temperature to obtain a first mixed solution; S2, mixing a second precursor, a second ligand and a solvent, and adding the first mixed solution at a second temperature to preparea second mixed solution; S3, heating the second mixed solution for a first time length to a third temperature, and keeping the temperature constant for a second time length at the third temperature; and S4, heating for a third time duration to a fourth temperature, and keeping the temperature constant for a fourth time duration at the fourth temperature to obtain the quantum dot core. According tothe method, the nucleation and the growth uniformity of quantum dots are controlled through a multi-gradient heating technology, so that the half-peak width of the cadmium-free quantum dot nucleus and the half-peak width of the quantum dots are reduced, and the luminous efficiency of the cadmium-free quantum dots is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cadmium-free quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, have a wide range of applications in display, lighting, biology and solar cells due to their advantages of tunable emission wavelength, high luminous efficiency and good stability. In recent years, great progress has been made in the research of quantum dot materials containing CdSe, CdS and other II-VI groups, and their luminous efficiency, half-peak width, stability and other properties have been greatly improved, and they have been used in display, biology, etc. field. However, since Cd is a toxic heavy metal, the EU Regulations on Registration, Evaluation, Authorization and Restriction of Chemicals (referred to as "REACH") have made strict regulations on the amount of Cd contained in the goods entering its market, and it is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02
CPCC09K11/883C09K11/02
Inventor 高静余文华
Owner NANJING TECH CORP LTD
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