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Tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and preparation method thereof and tellurium-cadmium-mercury liquid phase epitaxial growth method

A liquid phase epitaxy and epitaxy growth technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of uneven temperature field, and the thermal conductivity of transmission substrate materials cannot meet the temperature control conduction well. Achieve the effect of improving temperature field control ability, ensuring uniform heat conduction processing ability, and low half-peak width

Pending Publication Date: 2021-12-10
安徽光智科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned problems in the prior art, in order to solve the problem that before the mother liquor contacts the substrate and during the epitaxial growth process of the mercury cadmium telluride film, the uneven temperature field will cause the cooling of each point on the interface, and the thermal conductivity of the transmission substrate material is not very good. A substrate material for liquid phase epitaxial growth source of mercury cadmium telluride is proposed to meet the problem of temperature control conduction needs

Method used

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  • Tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and preparation method thereof and tellurium-cadmium-mercury liquid phase epitaxial growth method
  • Tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and preparation method thereof and tellurium-cadmium-mercury liquid phase epitaxial growth method
  • Tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and preparation method thereof and tellurium-cadmium-mercury liquid phase epitaxial growth method

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Embodiment 1

[0036] A substrate of a mercury cadmium telluride liquid phase epitaxial growth source, comprising a cadmium zinc telluride substrate and a multilayer complex coating, the multilayer complex coating is loaded on the top of the cadmium zinc telluride substrate body, and the multilayer complex The coating is alternately deposited on the top of the CdZnTe substrate body by spray electrodeposition, the multilayer complex coating is a copper / nickel complex coating, and the molar ratio of copper to nickel is 2:8, and the substrate body is The cadmium zinc telluride substrate has a size of 2 cm×3 cm, and the resistivity of the cadmium zinc telluride substrate is 108˜148 Ω·m.

[0037] The substrate of the above-mentioned mercury cadmium telluride liquid phase epitaxial growth source, the specific process flow chart is as follows figure 1 Shown, its preparation method comprises:

[0038] (1) Prepare the CdZnTe substrate. The specific processing method includes: grinding and polishing ...

Embodiment 2

[0047] In one embodiment, the present invention also provides a CdZnTe liquid phase epitaxial growth source substrate, comprising a CdZnTe substrate and a multilayer complex coating, and the multilayer complex coating is supported on a CdZnTe substrate Bottom top, described multilayer complex coating is alternately deposited on the cadmium zinc telluride substrate top by spray electrodeposition, and described multilayer complex coating is copper / nickel complex coating, and the mol ratio of copper and nickel is 4: 6.

[0048] The substrate of the above-mentioned mercury cadmium telluride liquid phase epitaxial growth source, its preparation method comprises:

[0049] (1) Prepare the CdZnTe substrate. The specific processing methods include: grinding and polishing the 111 crystal phase surface of the CdZnTe substrate with 1% bromomethanol, then rinsing with isopropanol solution and blowing dry with a nitrogen gun. A certain oxygen pressure is set outside, and the copper and nic...

Embodiment 3

[0058] In one embodiment, the present invention also provides a substrate material for a CdZnTe liquid-phase epitaxial growth source, comprising a CdZnTe substrate and a multilayer complex coating, the multilayer complex coating loaded on ZnTe On the top of the cadmium substrate, the multilayer complex coating is alternately deposited on the top of the cadmium zinc telluride substrate by spray electrodeposition, the multilayer complex coating is a copper / nickel complex coating, and the molar ratio of copper to nickel is 7:5.

[0059] The substrate of the above-mentioned mercury cadmium telluride liquid phase epitaxial growth source, its preparation method comprises:

[0060] (1) Prepare the CdZnTe substrate. The specific processing methods include: grinding and polishing the 111 crystal phase surface of the CdZnTe substrate with 1% bromomethanol, then rinsing with isopropanol solution and blowing dry with a nitrogen gun. A certain oxygen pressure is set outside, and the coppe...

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Abstract

The invention discloses a tellurium-cadmium-mercury liquid phase epitaxial growth source substrate, which comprises a substrate body and a complex plating layer, wherein the complex plating layer is arranged on the substrate body, and a window for liquid phase epitaxial growth of tellurium-cadmium-mercury is arranged between the complex plating layer and the substrate body. The invention also discloses a preparation method of the tellurium-cadmium-mercury liquid phase epitaxial growth source substrate and a tellurium-cadmium-mercury liquid phase epitaxial growth method based on the substrate. According to the invention, the substrate can effectively solve the problems that the temperature of each point on an interface is reduced and the heat conductivity coefficient of a transmission substrate material cannot well meet the requirement of temperature control conduction due to non-uniform temperature field before mother liquor is in contact with the substrate and in the epitaxial growth process of a tellurium-cadmium-mercury film; and the mercury-cadmium-mercury grown on the substrate in a liquid phase epitaxial manner has quite good thickness uniformity, surface smoothness, high single crystal property and relatively low half-peak width.

Description

technical field [0001] The invention belongs to the technical field of mercury cadmium telluride liquid phase epitaxial growth, in particular to a mercury cadmium telluride liquid phase epitaxial growth source substrate and a preparation method thereof, and a substrate-based mercury cadmium telluride liquid phase epitaxial growth method. Background technique [0002] Mercury cadmium telluride is an important II-VI compound semiconductor with superior photoelectric properties. The room temperature nuclear radiation detectors prepared from it are widely used in X-ray spectroscopy, medical imaging, industrial control, security detection and basic scientific research, etc. It has broad application prospects and immeasurable market value. [0003] Among them, the temperature in the liquid phase epitaxial growth source of HgCdTe material has a great influence on the epitaxial growth rate. Among them, the basic thermal conductivity of the substrate is a necessary requirement for th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C25D5/08C25D5/12C25D7/12
CPCH01L21/02562H01L21/02623H01L21/02428C25D5/08C25D5/12C25D7/12Y02P70/50
Inventor 许军杨晓杰龚月李承林李想赵倩毛成状
Owner 安徽光智科技有限公司
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