S parameter detection device and method
A technology for parameter detection and value monitoring, which is applied in the field of S parameter detection devices, can solve the problems of not being able to know the change of the transmission S21 parameter, not being able to monitor the change of the return loss of the input port, and not being able to monitor the phase change of the reflected signal, etc., to achieve Improve the utilization rate, improve the efficiency of use, and expand the effect of application functions
Active Publication Date: 2021-10-26
CHINA ELECTRONIS TECH INSTR CO LTD
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0008] (1) When micro-discharge occurs in the DUT, it is impossible to know the change of the standing wave at the port;
[0009] (2) When micro-discharge occurs in the tested part, it is impossible to know the change of transmission S21 parameters;
[0010] (3) The DUT cannot monitor the change in return loss of the input port during the test;
[0011] (4) During the testing process, the DUT cannot monitor the phase change of the reflected signal
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] It should be noted that the following detailed description is exemplary and intended to provide further explanation of the present disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs.
[0047] It should be noted that the terminology used herein is only for describing specific embodiments, and is not intended to limit the exemplary embodiments according to the present disclosure. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.
[0048] Explanation of terms:
[0049] VSWR: Voltage Standing Wave Ratio, voltage standing wave ratio.
[0050] In order to so...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present disclosure provides an S-parameter detection device and method, wherein the S-parameter detection device is applied to a vacuum micro-discharge test device, and includes a signal separation device configured to couple a transmission signal, a coupling reflection signal, and a coupling output signal are respectively divided into two channels of signals; the vector network analyzer is configured to receive one channel of coupled transmission signal, one channel of coupled reflection signal and one channel of coupled output signal output by the signal separation device, and output the reflected signal amplitude variation, reflected signal phase variation, transmission amplitude variation and transmission phase variation; the main controller is configured to calculate the return loss, standing wave and transmission loss.
Description
technical field [0001] The disclosure belongs to the technical field of testing, and in particular relates to an S-parameter detection device and method. Background technique [0002] The statements in this section merely provide background information related to the present disclosure and do not necessarily constitute prior art. [0003] The micro-discharge effect, also known as the secondary electron multiplication effect, refers to the secondary electron emission and multiplication effect excited by free electrons between two metal surfaces or on the surface of a single medium under the acceleration of an external radio frequency field under vacuum conditions. This vacuum resonance discharge phenomenon is a very important factor affecting the reliability of space electronic equipment. [0004] The microdischarge effect mainly occurs in the radio frequency, microwave, and millimeter wave systems of the spacecraft. A spacecraft working normally in space orbit will be affe...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00
CPCG01R31/00
Inventor 雷卫平郭荣斌
Owner CHINA ELECTRONIS TECH INSTR CO LTD