Method and system for measuring maximum output power of semiconductor power generation module
A technology for maximum output power and power generation modules, which is applied in the direction of single semiconductor device testing, measuring electricity, and measuring devices, and can solve problems such as the inability to quickly and accurately obtain the maximum power of semiconductor power generation modules
Inactive Publication Date: 2020-11-24
HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY
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[0003] The purpose of the present invention is to provide a method and system for measuring the maximum output power of a semiconductor power generation module, aiming to solve the problem that the maximum power of a semiconductor power generation module cannot be obtained quickly and accurately in the prior art
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[0027] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
[0028] In order to illustrate the technical solutions of the present invention, specific examples are used below to illustrate.
[0029] refer to figure 1 , figure 1 A schematic flowchart of a method for measuring the maximum output power of a semiconductor power generation module provided by an embodiment of the present invention. The method in this embodiment may include:
[0030] Step 101, ...
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The invention is applicable to the technical field of semiconductor power generation, and provides a method and system for measuring the maximum output power of a semiconductor power generation module, and the method comprises the steps: determining the change relation between the internal resistance and the output current of the semiconductor power generation module according to the relation between the internal resistance and the conductivity, the relation between the conductivity and the temperature, and the relation between the temperature and the output current; judging whether the changerelation between the internal resistance and the output current of the semiconductor power generation module is a monotonous change relation or not; if the change relation between the internal resistance and the output current of the semiconductor power generation module is a monotonous change relation, determining a first average temperature corresponding to the maximum output current of the conductor power generation module and a second average temperature corresponding to the minimum output current of the conductor power generation module according to a fourth change relation; and determining the maximum output power of the semiconductor power generation module according to the first average temperature and / or the second average temperature. The method can realize accurate and rapid measurement of the maximum output power of the semiconductor power generation module.
Description
technical field [0001] The invention belongs to the technical field of semiconductor power generation, and more specifically relates to a method and system for measuring the maximum output power of a semiconductor power generation module. Background technique [0002] The semiconductor power generation module (Thermoelectric Generator, TEG) uses the semiconductor material Seebeck (Seebeck) thermoelectric effect to realize the conversion of heat energy into electrical energy. One of the research contents of the thermoelectric industry, the key to realize the maximum power output of TEG lies in the matching degree of the load and the internal resistance of the TEG, that is, the determination of the matching load value. Due to constant cold and hot end temperatures, TEG internal resistance and TEG electromotive force will dynamically change with TEG output current. Therefore, under the rated temperature conditions of TEG cold and hot end faces, how to accurately and quickly obt...
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IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 高俊岭石桂菊
Owner HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY