Device and method for preparing high-density twin crystal material

A high-density, twinning technology, applied in the field of twinning, can solve problems such as difficulty in preparing twinning, and achieve the effects of convenient operation, low energy consumption, and simple equipment structure.

Pending Publication Date: 2019-04-12
SOUTHWEST JIAOTONG UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of the present invention is to provide equipment and methods for preparing high-density twinned materials, so as to solve the problem that twins are difficult to prepare in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for preparing high-density twin crystal material
  • Device and method for preparing high-density twin crystal material
  • Device and method for preparing high-density twin crystal material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0055] The equipment for preparing high-density twinned material according to the specific embodiment of the present invention is as figure 1 As shown, it includes a fixing device 2 for fixing the sample 1, a launching device 3 arranged in front of the sample 1, and a recovery device 4 arranged at the rear of the sample 1; the fixing device 2 includes a through hole 21 matching the size of the outer edge of the sample 1; Described launching device 3 comprises the flying sheet 31 that matches with the shape of sample 1 and is parallel, the bullet holder 32 that carries flying sheet 31 to move toward sample 1 and the gun barrel 33 that flies for bullet holder 32; The rearmost buffer layer 41 ; a window 5 connected with the sample 1 and made of the same material is provided behind the sample 1 . Wherein, the fixing device 2 , the launching device 3 and the recovering device 4 are all arranged in the target chamber 6 .

[0056] Said fixing device 2 comprises a fixing frame 22 arr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a device and method for preparing a high-density twin crystal material. The device for preparing the high-density twin crystal material comprises a fixing device used for fixing a sample, a transmitting device arranged in front of the sample and a recovery device arranged behind the sample. The fixing device comprises a through hole matched with the size of the outer edge of the sample. The transmitting device comprises a flying sheet which is matched with the shape of the sample and is parallel to the sample, an elastic support used for supporting the flying sheet to move towards the sample and a gun barrel allowing the elastic support to fly. The recovery device comprises a buffer layer arranged on the rearmost portion. A window connected with the sample is arranged behind the sample, and the material of the window is the same as that of the sample. Compared with a traditional gas gun device, the structure is simple, operation is convenient, the stress state generated when the sample is bumped is changed, energy consumption generated in the use process is low, and the metal material with high-density twin crystals can be obtained more easily even though the speed is low. The interior of an obtained product is not damaged, and unfavorable conditions that grains are refined and structures are generated are also avoided.

Description

technical field [0001] The invention relates to the technical field of twinning, in particular, to equipment and methods for preparing high-density twinning materials. Background technique [0002] Deformation twinning is an important deformation mechanism for plastic deformation of metals. Twins are easy to generate at the stress concentration inside the material, release the shear stress, and change the local orientation at the same time, further increasing the possibility of dislocation slip, thus improving the performance of the material. In general, materials with a high density of twins have higher strength and hardness. [0003] The generation of twins often requires a large plastic deformation, which can be achieved by the equal channel angular extrusion method, but the loading of such a large plastic deformation often results in refined grains and a texture that is different from the original sample. [0004] The main factors affecting the formation of twins are g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C21D7/06C22F1/00
CPCC21D7/06C22F1/00
Inventor 杨坤李超陈月罗胜年
Owner SOUTHWEST JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap