display device and electronic device
A display device and electrode technology, which is applied to identification devices, lighting devices, circuits, etc., can solve the problems of deterioration of display quality and insufficient capacity of capacitor elements, and achieve the effect of suppressing deterioration.
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no. 1 approach
[0092] The first embodiment uses the anode electrode 21 of the organic EL element 21 A An example of holding capacitor 24 having a MIM structure is formed. Figure 4 A cross-sectional structure of the holding capacitor 24 according to the first embodiment is shown.
[0093] like Figure 4 As shown, the holding capacitor 24 according to the first embodiment includes a positive electrode 21 formed on A The first electrode 241 in the wiring layer (third wiring layer 83 ) of the lower layer, and the first electrode 241 formed to face the first electrode 241 and electrically connected to the anode electrode 21 via the contact unit 242 A The second electrode 243. Then, a dielectric 244 as a first insulating layer is interposed between the first electrode 241 and the second electrode 243 . The dielectric 244 includes a material used to form the fourth insulating layer 74 (eg, SiO) or a high dielectric material (eg, SiN) different from the fourth insulating layer 74 . Therefore, ...
no. 2 approach
[0096] The second embodiment is a modified example of the first embodiment, and is an example in which the holding capacitor 24 includes two capacitor elements. Figure 5 A cross-sectional structure of the holding capacitor 24 according to the second embodiment is shown.
[0097] exist Figure 5 , if the holding capacitor 24 according to the first embodiment is the first capacitor element 24 -1 , then the holding capacitor 24 according to the second embodiment includes the first capacitor element 24 -1 outside the second capacitor element 24 -2 , and the first capacitor element 24 -1 and the second capacitor element 24 -2 connected in parallel. first capacitor element 24 -1 and the second capacitor element 24 -2 connected in parallel such that only the first capacitor element 24 -1 In this case, in other words, the capacitance value of the holding capacitor 24 according to the second embodiment can be set larger than that of the holding capacitor 24 according to the fi...
no. 3 approach
[0103] The third embodiment is a modified example of the second embodiment, and only the second capacitor element 24 of the second embodiment -2 Used as an example of hold capacitor 24 . Image 6 The cross-sectional structure of the holding capacitor 24 according to the third embodiment is shown.
[0104] like Image 6 As shown, the holding capacitor 24 according to the third embodiment has an anode electrode 21 including a positive electrode 21 using an organic EL element 21 A The arrangement of the capacitor element of the MIM structure is formed in the wiring layers (the second wiring layer 82 and the third wiring layer 83 ) directly below.
[0105] As mentioned above, using the anode electrode 21 A The wiring layer directly below forms a holding capacitor 24 having a MIM structure so that the gate electrode 22 used with G The wiring layer immediately above (the first wiring layer 81) forms the storage capacitor 24 (see image 3 ) compared to the case of the anode elec...
PUM
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