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Full vanadium nitride current collector/electrode supercapacitor and preparation method thereof

A supercapacitor and current collector technology, which is applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, hybrid capacitor collectors, etc., can solve problems such as poor frequency response characteristics, and achieve poor adhesion and simple and easy process , The effect of strong process applicability

Active Publication Date: 2020-01-24
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the supercapacitors prepared by the current research, the above-mentioned thin films are used as electrode materials and current collectors at the same time. Due to the high resistivity of the thin films, it also leads to the problem of poor frequency response (magnification) characteristics.

Method used

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  • Full vanadium nitride current collector/electrode supercapacitor and preparation method thereof
  • Full vanadium nitride current collector/electrode supercapacitor and preparation method thereof
  • Full vanadium nitride current collector/electrode supercapacitor and preparation method thereof

Examples

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Embodiment example 1

[0032] In this embodiment, a single crystal silicon substrate is selected as the substrate, and the semiconductor industry standard RCA cleaning process is used for cleaning. DC reactive magnetron sputtering is adopted, the target material is vanadium metal, the target base distance is 30mm, Ar:N 2 =10:1sccm, sputtering power: 100W, substrate temperature: 400°C, working pressure: 0.2Pa, substrate bias: -50V, sputtering time: 10min, first deposit a layer with a thickness of 25nm, and a resistivity of 100 μΩ· cm, the surface is smooth and dense VN film as the current collector material, and then the distance between the target and the base is 30mm, Ar:N 2=10:1sccm, sputtering power: 100W, substrate temperature: 400°C, working pressure: 0.4Pa, sputtering time: grow a layer with a thickness of 280nm and a resistivity of 3000μΩ·cm in 30min. Porous VN film is used as an electrode Material. Using a three-electrode test system, the working electrode is VN, the counter electrode is p...

Embodiment example 2

[0034] In this embodiment, a single crystal silicon substrate is selected as the substrate, and the semiconductor industry standard RCA cleaning process is used for cleaning. DC reactive magnetron sputtering is adopted, the target material is vanadium metal, the target base distance is 30mm, Ar:N 2 =10:1sccm, sputtering power: 100W, substrate temperature: 400°C, working pressure: 0.2Pa, substrate bias: -50V, sputtering time: 10min, first deposit a layer with a thickness of 25nm, and a resistivity of 100 μΩ· cm, the surface is smooth and dense VN film as the current collector material, and then the distance between the target and the base is 40mm, Ar:N 2 =15:1sccm, sputtering power: 200W, substrate temperature: 300°C, working pressure: 0.4Pa, sputtering time: grow a layer with a thickness of 280nm and resistivity of 3000μΩ·cm under the conditions of 30min. Porous VN film is used as an electrode Material. Using a three-electrode test system, the working electrode is VN, the co...

Embodiment example 3

[0036] In this embodiment, a single crystal silicon substrate is selected as the substrate, and the semiconductor industry standard RCA cleaning process is used for cleaning. Using radio frequency reactive magnetron sputtering, the target material is vanadium metal, the target base distance is 50mm, Ar:N 2 =20:1sccm, sputtering power: 200W, substrate temperature: 200℃, working pressure: 0.6Pa, substrate bias voltage: -150V, sputtering time: 15min, first deposit a layer with a thickness of 60nm and a resistivity of 110 μΩ· cm, the surface is smooth and dense VN film as the current collector material, and then the distance between the target and the base is 50mm, Ar:N 2 =20:1sccm, sputtering power: 200W, substrate temperature: 200°C, working pressure: 0.6Pa, sputtering time: grow a layer with a thickness of 230nm and a resistivity of 3200μΩ·cm in 20min, and use a porous VN film as an electrode Material. Using a three-electrode test system, the working electrode is VN, the coun...

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Abstract

The invention provides a full vanadium nitride current collector / electrode supercapacitor and a preparation method thereof, which belong to the technical field of new energy materials and devices. Thepreparation method comprises the steps of: firstly, cleaning and removing impurities on the surface of a substrate; then depositing a VN thin film with high density and high conductivity on the surface of the substrate as an electron transport current collector material, changing thin film surface atomic diffusion, nucleation growth and the like mechanisms through regulating and controlling deposition process parameters, and directly continuing the growth of a layer of a porous and low-conductivity VN thin film as an electrode material on the current collector. The current collector and the electrode undergo VN continuous growth, the performance of the materials is cut through simply changing the deposition process parameters of the thin film, the preparation method has the advantages ofsimple and feasible process, low cost, variety selections of thin film deposition technologies and high process applicability, solves the problems of delamination cracking and large contact resistancecaused by poor adhesion between dissimilar current collectors and the electrode materials, lattice mismatch and difference in thermal expansion coefficients, and can greatly improve the power density, thermal stability and long-term service reliability of the supercapacitor.

Description

technical field [0001] The invention belongs to the technical field of new energy materials and devices, and relates to a full vanadium nitride current collector / electrode supercapacitor and a preparation method thereof. Background technique [0002] Supercapacitors have significant advantages such as high energy and power density, long charge-discharge cycle life, wide operating temperature range, maintenance-free, environmentally friendly and pollution-free, and have attracted widespread attention as a new type of green energy storage method. In recent years, the research and popularization of various sensor systems in the wireless Internet of Things, as well as wearable and implantable medical devices have developed rapidly. And the urgent need for full monolithic integration with other electronic components. [0003] Supercapacitors can be divided into two categories according to different energy storage mechanisms. One is the electric double layer capacitor, which stor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/28H01G11/30H01G11/68H01G11/84H01G11/86
CPCH01G11/28H01G11/30H01G11/68H01G11/84H01G11/86Y02E60/13
Inventor 周大雨孙纳纳杨旭马晓倩
Owner DALIAN UNIV OF TECH