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Method of performing die-based heterogeneous integration and devices including integrated dies

A bare-chip, heterogeneous technology, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as adverse effects on yield rate and increased costs

Inactive Publication Date: 2019-04-26
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These approaches also generally require the application of expensive polishing techniques, which can increase cost and adversely affect yield

Method used

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  • Method of performing die-based heterogeneous integration and devices including integrated dies
  • Method of performing die-based heterogeneous integration and devices including integrated dies
  • Method of performing die-based heterogeneous integration and devices including integrated dies

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Embodiment Construction

[0042] Exemplary embodiments relate to devices integrating heterogeneous elements, such as semiconductor elements and active semiconductor elements, including but not limited to III-V materials and components made from these materials. The following description is presented to enable one of ordinary skill in the art to make and use the invention, and is provided in the context of a patent application and its claims. Various modifications to the exemplary embodiments, and the general principles and features set forth herein will be readily apparent. The exemplary embodiments are mainly described for the specific methods and systems provided in the detailed description. However, the methods and systems described will function effectively in other embodiments as well.

[0043] Phrases such as "exemplary embodiment," "one embodiment," and "another embodiment" can refer to the same or different embodiments as well as multiple embodiments. Embodiments will be described with respec...

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Abstract

A method for integrating heterogeneous elements with elements residing on a target wafer is described. A source die including a compound semiconductor substrate, an etch stop layer and at least one active semiconductor element is provided. The etch stop layer is between the active semiconductor element(s) and the substrate. The etch stop layer is resistant to a plasma etch for the substrate. A bonding agent is provided on a surface of the target wafer. The source die is aligned to and placed on the part of the surface of the target wafer such that the active semiconductor element(s) are between the target wafer's surface and the substrate. The bonding agent is between the source die and the surface of the target wafer. The source die is bonded to the target wafer using the bonding agent. The substrate of the source die is removed, wherein the removal includes performing the plasma etch.

Description

[0001] [Cross-reference to related applications] [0002] This application claims priority and rights to U.S. Provisional Application No. 62 / 574,712, filed October 19, 2017, and entitled "Methods of Performing Die-Based Heterogeneous Integration and Devices Including Integrated Dies," and in Priority and rights to U.S. Application No. 15 / 880,349, filed January 25, 2018, and entitled "Methods of Performing Die-Based Heterogeneous Integration and Devices Including Integrated Dies," said U.S. provisional application and The entire contents of the US application are incorporated into this application by reference. technical field [0003] The present application generally relates to methods of performing heterogeneous die-based integration and devices including integrated dies. Background technique [0004] Integrated devices including semiconductors and other materials may have improved performance and / or functionality. For example, it may be desirable to integrate photonic c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L25/07
CPCH01L21/50H01L25/072H01L25/50H01L25/18H01L21/7806H01L21/30621H01L2224/32145H01L2224/94H01L2224/97H01L2224/16145H01L2224/32014H01L2224/32013H01L2224/27416H01L2224/27312H01L2224/27318H01L2224/83191H01L2224/83192H01L2924/3512H01L2224/83122H01L2224/83855H01L2924/18161H01L2224/29188H01L2224/04105H01L2224/73267H01L24/83H01L24/29H01L24/94H01L24/97H01L2224/92244H01L24/32H01L2224/83H01L2224/81H01L21/52H01L21/3065H01L21/185H01L21/78H01L21/67092H01L2224/83203H01L21/30612H01L23/5386H01L2924/10253H01L2924/1032H01L2224/8392H01L2224/8389
Inventor 丹尼尔·N·卡罗瑟斯
Owner SAMSUNG ELECTRONICS CO LTD