Temperature measurement method based on MOSFET device interface trap recombination effects
An interface trap, temperature measurement technology, which is applied in the directions of thermometers, thermometers, and heat measurement with directly sensitive electrical/magnetic components, which can solve the problems of small measurement range and so on.
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[0032] This embodiment provides a temperature measurement method based on the MOSFET interface trap effect. This embodiment selects an n-type MOSFET as the experimental equipment. When scanning with the gate voltage Vg, I is obtained. r The change curve of I r The change curve of is trough-like, with a minimum value Irmin. The method will be described below in conjunction with the accompanying drawings.
[0033] Such as figure 1 , the method includes:
[0034] Step 101: measure the minimum recombination current Irmin produced at the drain when the MOSFET interface trap acts as a recombination center under the current environment;
[0035] Step 102: Find the corresponding temperature value in the current-temperature comparison table according to the measured minimum combined current Irmin, which is the temperature of the current environment.
[0036] Wherein, in step 102, the comparison table of current and temperature is obtained by the following method:
[0037] Step 201...
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