Display substrate manufacturing method, display substrate and display panel
A production method and technology for display substrates, which are applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of high energy consumption and thermal deformation of substrates and substrates.
Inactive Publication Date: 2019-05-03
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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Problems solved by technology
[0003] In the process of implementing the solid-phase crystallization method, it is necessary to use a high-temperature furnace to continuously heat the substrate on which the amorphous silicon layer is formed, which not only consumes high energy, but also causes thermal deformation of the substrate made of glass and other materials.
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[0035] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0036] As an aspect of the present invention, a method for manufacturing a display substrate is provided, such as figure 1 As shown, the preparation method includes:
[0037] Step S1, providing an initial substrate;
[0038] Step S2, forming a semiconductor initial pattern, wherein the semiconductor initial pattern includes an amorphous silicon pattern formed on the initial substrate and a metal pattern formed on the surface of the amorphous silicon pattern away from the initial substrate, the The shape of the metal pattern is consistent with the shape of the amorphous silicon pattern;
[0039] Step S3, using electromagnetic induction to heat the metal patter...
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The invention provides a display substrate manufacturing method. The display substrate manufacturing method comprises the steps of: providing an initial substrate; forming a semiconductor initial pattern, wherein the semiconductor initial pattern comprises an amorphous silicon pattern formed on the initial substrate and a metal pattern formed on the surface, away from the initial substrate, of theamorphous silicon pattern; and heating the metal pattern by adopting an electromagnetic induction mode, so as to recrystallize the amorphous silicon pattern to form a polysilicon pattern. The invention further provides a display substrate prepared by adopting the display substrate manufacturing method and a display panel comprising the display substrate. The display substrate manufacturing methodcan prevent the display substrate from being thermally deformed in an annealing process.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to a method for manufacturing a display substrate, a display substrate manufactured by the method, and a display panel including the display substrate. Background technique [0002] Low-temperature polysilicon thin-film transistors have been widely used because of their good switching performance. The active layer of the low-temperature polysilicon thin film transistor is made of low-temperature polysilicon material. In order to obtain low-temperature polysilicon material, it is necessary to form a layer of amorphous silicon layer on the base substrate, and then use solid phase crystallization method to anneal the amorphous silicon layer, and the annealing temperature is about 500°C to 1000°C. [0003] In the process of implementing the solid-phase crystallization method, it is necessary to use a high-temperature furnace to continuously heat the substrate on which the amor...
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Login to View More IPC IPC(8): H01L21/77H01L27/12
Inventor 曹可杨成绍桂学海刘融
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD