Method for monitoring edge defect of wafer

Abstract

The invention discloses a method for monitoring the edge defect of a wafer, comprising the steps of: 1, collecting the characteristic parameters digitally formed by the scanning photos of the known types of edge defects of a wafer and adding the characteristic parameters of various edge defects to a defect database; 2, scanning and photographing the edge of a monitored wafer to form a scanned photo; 3, selecting and digitizing the various edge defects from the scanned photo of the monitored wafer, and obtaining a corresponding feature parameter; and 4, performing a subtraction between the characteristic parameters of various edge defects corresponding to the monitored wafer and the characteristic parameters in the defect database, and determining the types of the various edge defects corresponding to the monitored wafer according to a difference value. The method can realize comprehensive real-time monitoring of various known and new unknown defects, eliminates blind spots for monitoring unknown defects and eliminate the influence on products caused by monitoring blind spots, and improves product quality.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for monitoring crystal edge defects of a wafer. Background technique [0002] Semiconductor integrated circuits are usually formed on wafers, which are generally silicon substrate wafers. With the development of technology, the size of wafers, that is, the diameter has been developed from 4 inches, 6 inches, 8 inches to 12 inches. In the production process of round such as 12-inch wafers, with the continuous reduction of the manufacturing process and the continuous optimization of the process, more new types of crystal edge defects will be produced in each step of the process. Defects at the edge of the circle, crystal edge defects such as film peeling, etc., will cause yield loss once they fall into effective devices during the process. Effective devices are devices in the chip formation area inside the edge of the wafer. Devices at round...

AI Technical Summary

Problems solved by technology

[0004] In the existing method, each type of defect must establish a corresponding crystal edge scanning program, and defects without a corresponding crystal edge scanning program cannot be monitored online. The current crystal edge monitoring method is directional, that is, it can only target However, for unknown new types of crystal edge defects, the current monitoring method cannot be found in the first time, and there is a certain delay in timeliness

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