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Insulated gate bipolar transistor and preparation method thereof, and electrical device

A technology for bipolar transistors and electrical equipment, applied in the electrical field, can solve problems such as low channel density, increased trench area ratio, and reduced on-current

Inactive Publication Date: 2019-05-07
GREE ELECTRIC APPLIANCES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But at the same time, the structure of the insulated gate bipolar transistor also has its disadvantages: the channel density is low, which is equivalent to the same area of ​​the original cell, the conduction current becomes smaller, the ratio of the trench area increases, and the capacitance between the gate and the collector increases. Causes an increase in Miller plateau capacitance, which increases switching losses

Method used

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  • Insulated gate bipolar transistor and preparation method thereof, and electrical device
  • Insulated gate bipolar transistor and preparation method thereof, and electrical device
  • Insulated gate bipolar transistor and preparation method thereof, and electrical device

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Embodiment Construction

[0036] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0037] first reference figure 2 , figure 2 A schematic structural diagram of an insulated gate bipolar transistor provided by an embodiment of the present invention is shown.

[0038] The IGBT provided in the embodiment of the present invention includes a multilayer structure. Such as figure 2 As shown in , the insulated gate bipolar transistor is provided with multiple layers in a stacked manner to figure 2 The shown direction ...

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Abstract

The invention provides an insulated gate bipolar transistor and a preparation method thereof, and an electrical device. Two polysilicon layers are formed by etching an insulated gate bipolar transistor at a polysilicon layer in a trench, an N-type layer and a P-type layer are added at the bottom portion of the trench, a current path adds a channel current at the side wall of the bottom portion ofthe trench and a current of a PNP structure at the middle portion of the bottom portion of the channel while having a current path constructed by a traditional insulated gate bipolar transistor with awide trench, and therefore, in the same area, the electrifying capacity of the trench is better.

Description

technical field [0001] The invention relates to the field of electrical technology, in particular to an insulated gate bipolar transistor, a preparation method thereof, and electrical equipment. Background technique [0002] At present, the IGBT with the wide trench structure and the IGBT with the narrow trench structure are similar in structure except for the width of the trench, such as figure 1 As shown in , its structure specifically includes: the bottom part of the trench and the lower part of the side are an N-type layer 1, the middle part of the side of the trench is a P-type layer 2, and the upper part of the trench side is an N-type layer 1 . [0003] Compared with narrow trench (trench) insulated gate bipolar transistors, the structure of wide trench-insulated gate bipolar transistors has several advantages: the ratio of emitter conductive area is lower, and the channel size is reduced. The density reduces the short-circuit current and makes the short-circuit cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/06H01L29/739
Inventor 廖勇波史波肖婷何昌
Owner GREE ELECTRIC APPLIANCES INC