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Method for preparing light emitting diode device

A technology for light-emitting diodes and devices, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of single light-emitting diode devices, and achieve the effect of improving performance and preventing damage

Active Publication Date: 2019-05-10
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a method for preparing a light-emitting diode device, which can solve the problem in the related art that the method of preparing a light-emitting diode device is relatively simple. The technical solution is as follows:

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  • Method for preparing light emitting diode device
  • Method for preparing light emitting diode device
  • Method for preparing light emitting diode device

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Embodiment Construction

[0055]In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments . Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0056] In the related art, laser light is needed in the process of preparing the light emitting diode device, and the structure of the light emitting diode is easily penetrated and damaged by the laser light, resulting in poor performance of the finally formed light emitting diode device. An embodiment of the present invention provides a method for manufacturing a light emitting diode device, which can avoid damage to the structure of the li...

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Abstract

The invention provides a method for preparing a light emitting diode device, belonging to the technical field of display. The method for preparing the light emitting diode device comprises the following steps: forming an intermediate layer and a light emitting diode layer sequentially stacked in a direction away from an auxiliary substrate on the auxiliary substrate, wherein the intermediate layerincludes at least one intermediate structure, and the light emitting diode layer includes at least one light emitting diode structure group corresponding to the at least one intermediate structure inone-to-one correspondence; attaching the auxiliary substrate to a target substrate, and placing the light emitting diode layer between the intermediate layer and the target substrate; controlling m intermediate structures in the at least one intermediate structure to generate heat, so that one end of the light emitting diode structures stacked by the m intermediate structures near the m intermediate structures are thermally decomposed, m is greater than or equal to 1; and moving the auxiliary substrate away from the target substrate to separate the m intermediate structures from the light emitting diode structures stacked with the m intermediate structures. The invention solves the problem that the method for preparing the light emitting diode device in the related art is relatively simple. The invention is used to prepare the light emitting diode device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a light emitting diode device. Background technique [0002] Light emitting diode (English: light emitting diode; LED for short) devices are more and more widely used, and LED devices can be applied to lighting, display and other fields. [0003] The LED device includes a target substrate, and an LED structure on the target substrate. In the process of manufacturing the LED device, the LED structure can be formed on the auxiliary substrate first. Next, the auxiliary substrate formed with the LED structure is buckled on the target substrate, and the LED structure is bonded to the target substrate. Afterwards, a laser can be irradiated to the junction of the auxiliary substrate and the LED structure, so that the chemical bonds between the auxiliary substrate and the plurality of functional layers are broken under the action of the laser, and then the auxil...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 孟虎
Owner BOE TECH GRP CO LTD
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