Power Devices and Appliances

Abstract

A power device (100), wherein the power device (100) comprises a control input terminal (SS), upper bridge arm switch tubes (127) and lower bridge arm switch tubes (128), a first drive circuit (129) connected to the control input terminal (SS) and used to drive the upper bridge arm switch tubes (127), and a second drive circuit (120) connected to the control input terminal (SS) and used to drive the lower bridge arm switch tubes (128). The control input terminal (SS) may be connected to a first level, a second level or a third level. When the control input terminal (SS) is connected to the first level, the first drive circuit (129) and the second drive circuit (120) output high and low level signals of a first voltage range. When the control input terminal (SS) is connected to the second level, the first drive circuit (129) and the second drive circuit (120) output high and low level signals of a second voltage range. When the control input terminal (SS) is connected to the third level, the first drive circuit (129) and the second drive circuit (120) output high and low level signals of a third voltage range. The first voltage range, the second voltage range, and the third voltage range are different.

Description

technical field [0001] The present application relates to the technical field of electrical appliances, and more specifically, to a power device and an electrical appliance. Background technique [0002] In the prior art, with the continuous improvement of system energy consumption requirements, the power consumption of the intelligent power module (IPM) has become the main source of power consumption of the inverter electronic control of the inverter air conditioner, how to reduce the power consumption of the intelligent power module has become an impact It is an important topic for the further promotion and application of intelligent power modules and even inverter air conditioners. Replacing Si devices with GaN devices or SiC devices is an effective way to reduce the power consumption of smart power modules, but it also brings new problems. [0003] The threshold voltages of GaN devices (3V), SiC devices (20V) and Si devices (15V) are different. The threshold voltage of...

AI Technical Summary

Problems solved by technology

The threshold voltage of GaN devices is lower than that of Si devices. If the same high-voltage integrated circuit (HighVoltage Integrated Circuit, HVIC) is used for driving, it is easy to cause the gate of GaN devices to be broken down; the threshold voltage of SiC devices is higher than that of Si If the threshold voltage of the device is driven by the same high-voltage integrated circuit tube, it is easy to cause the turn-on process of the SiC device to be incomplete, and the low power consumption advantage of the SiC device cannot be brought into play.

However, if different high-voltage integrated circuit tubes are used for driving, it will cause difficulties in the organization of materials in the production process, and there will be a risk of mixing materials, which will also push up the cost of smart power modules.

Moreover, if the high-voltage integrated circuit tube driving the Si device uses a lower voltage for power supply in order to ensure that the GaN device is not broken down, it will also easily increase the power consumption of the entire Si device intelligent power module, and even cause the Si device to fail to work normally.

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