Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for selective etching

A selective, etching process technology that is used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as device performance impact

Active Publication Date: 2019-05-21
INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW) +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This may have a negative impact on device performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for selective etching
  • Method for selective etching
  • Method for selective etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be described with respect to embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims. The drawings described are illustrative only and non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn on scale for illustrative purposes. The dimensions and relative dimensions do not correspond to actual reductions in the practice of the invention.

[0021] It should be noted that the term "comprising", used in the claims, should not be interpreted as being limited to the part listed thereafter, it does not exclude other elements or steps. Therefore, it should be understood as indicating the presence of said features, integrations, steps or components, but this does not exclude the presence or addition of one or more other features, integrations, steps or components or combinations thereof.

[0022] "One embodiment" or "one embodiment" mentioned in the sp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Method for removing a first feature comprising a Sn-containing first Group IV material selective to a second feature comprising a second Group IV material, the method comprising: providing, in a process chamber, a substrate having an upper surface, wherein the first feature and the second feature are arranged on the upper surface, wherein the Sn-containing first Group IV material comprises a dopant element; heating, in the process chamber, the substrate, and thereafter; performing an etch process comprising: introducing, into the process chamber, an etching gas, subjecting the substrate to theetching gas, wherein the etching gas is a chlorine-based or a bromine-based gas.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing. More specifically, the present invention relates to a method of selective etching. Background technique [0002] Selective etching is one of the process steps routinely used in the manufacture of semiconductor devices for various purposes. This leads to the desired surface or structure, which can then be further followed by other process steps, eg subsequent deposition processes or other etching processes, to achieve pattern transfer. Achieving the desired etch selectivity is critical because without the desired etch selectivity loss of geometry can occur, which is undesirable. Loss of geometry can lead to integration issues, degradation of device performance, and increased manufacturing costs due to reduced yield. [0003] As the semiconductor industry tries to keep up with scalability, new device structures are being explored to deliver the desired device performance. Depe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/3065H01L29/0673H01L29/42392H01L29/66742H01L29/78684
Inventor R·鲁C·波瑞特A·弗拉
Owner INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)