Unlock instant, AI-driven research and patent intelligence for your innovation.

A self-selection biasing circuit suitable for a level conversion chip

A conversion chip, self-selection technology, applied in the direction of logic circuit coupling/interface, logic circuit, logic circuit connection/interface arrangement using field effect transistors, etc., can solve the problem that the voltage domain of the input and output ports is limited, and the two-way signal cannot be truly realized Transmission and other issues

Active Publication Date: 2019-05-21
SHANGHAI AWINIC TECH CO LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a self-selection bias circuit suitable for level shifting chips to solve the problem in the prior art that the input and output port voltage domains are limited in level shifting applications and cannot truly realize two-way transmission of signals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A self-selection biasing circuit suitable for a level conversion chip
  • A self-selection biasing circuit suitable for a level conversion chip
  • A self-selection biasing circuit suitable for a level conversion chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0044] Such as image 3 As shown, it is a schematic diagram of Embodiment 1 of a self-selection bias circuit suitable for a level conversion chip disclosed by the present invention. The self-selection bias circuit suitable for a level conversion chip may include: a two-terminal power supply voltage comparison Module 301, low voltage selection module 302, high voltage selection module 303 and gate drive module 304; wherein:

[0045]The double-terminal power supply voltage comparison module ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a self-selection biasing circuit suitable for a level conversion chip. The self-selection biasing circuit comprises a double-end power supply voltage comparison module, a low-voltage selection module, a high-voltage selection module and a gate end driving module, Wherein the double-end power supply voltage comparison module, the low-voltage selection module and the high-voltage selection module are respectively connected with an input power supply and an output power supply; The double-end power supply voltage comparison module is used for comparing voltages of an inputpower supply and an output power supply; The low-voltage selection module is used for selecting lower voltage in the input power supply and the output power supply to be communicated to the gate end driving module through a first node; The high-voltage selection module is used for selecting higher voltage in the input power supply and the output power supply to be communicated to the gate end driving module through a second node; The gate end driving module is used for driving the gate end voltage of the first transistor. According to the invention, the problems that the voltage domain of theinput / output port is limited and bidirectional signal transmission cannot be truly realized in level conversion application in the prior art are solved.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a self-selection bias circuit suitable for level conversion chips. Background technique [0002] Level conversion chips are one of the common chip types in integrated circuits, and are widely used in systems such as data transmission, logic control, and digital-to-analog conversion. Its function is to transmit the logic level signal under the lower / higher voltage domain at one end to the higher / lower voltage domain at the other end, and minimize the transmission delay during the transmission process while maintaining the integrity of the signal. [0003] A common architecture of a level shifter chip is figure 1 shown. Among them, the MP1 tube and MP2 tube are port pull-up switch tubes, which are used to accelerate the port pull-up speed and reduce the transmission delay, and the ONE-SHOT module is the control module of the pull-up tube. Port A_Port and port B_Port ar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185H03K19/094
Inventor 董渊王云松程剑涛
Owner SHANGHAI AWINIC TECH CO LTD