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A preparation method of graphene oxide rare earth complex composite ultraviolet enhanced film

A rare earth complex, graphene technology, applied in chemical instruments and methods, luminescent materials and other directions, can solve problems such as poor stability of coating materials, affecting the use range of devices, etc., and achieve low cost, easy availability of materials and simple processes. Effect

Active Publication Date: 2021-11-26
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the poor stability of the coating material used affects the scope of use of this type of device

Method used

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  • A preparation method of graphene oxide rare earth complex composite ultraviolet enhanced film
  • A preparation method of graphene oxide rare earth complex composite ultraviolet enhanced film
  • A preparation method of graphene oxide rare earth complex composite ultraviolet enhanced film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Preparation of GOSs-rare earth complex fluorescent materials:

[0029] (1) Weigh the reaction raw materials according to the mass corresponding to the molar ratio of EuCl3·6H2O:2'2-bipyridyl:thienoyltrifluoroacetone=1:1:3;

[0030] (2) Put EuCl3·6H2O and GOSs in ethanol, mix and sonicate to obtain suspension A;

[0031] (3) Dissolving 2'2-bipyridine and thienoyltrifluoroacetone in ethanol to obtain solution B;

[0032] (4) Add suspension A and solution B into a 250ml single-necked bottle;

[0033] (5) Add an appropriate amount of NaOH aqueous solution to adjust the pH to 6-7;

[0034] (6) Heat at 60°C, stir, and react for 3 hours;

[0035] (7) Turn off the power, stand at room temperature for 12 hours, then filter with suction, wash with ethanol several times, and collect the product;

[0036] (8) Dry in an oven at 70°C (normal pressure), and collect the product.

Embodiment 2

[0038] Preparation of composite reinforced film:

[0039] (1) Weigh PVA124 into a glass bottle, add distilled water, and let stand for 2 hours (to make PVA swell);

[0040] (2) Add a stirrer, heat and stir at 85°C until completely dissolved;

[0041] (3) Add absolute ethanol, heat and stir at 65°C until completely dissolved;

[0042] (4) Weigh an appropriate amount of complex and add it to the above PVA solution;

[0043] (5) Heat and stir at 40°C for 24 hours to form a mixed luminescent glue;

[0044] (6) Spin-coating or casting to form a film as required;

[0045] (7) Oven drying at 40°C (normal pressure) to form a film.

Embodiment 3

[0047] Preparation of UV-enhanced linear array CCD:

[0048] (1) Cast the prepared luminescent mixture into the photosensitive tank of the linear array CCD;

[0049] (2) Place the CCD poured into the luminescent compound flatly in a drying oven;

[0050] (3) Drying in a 40°C oven under normal pressure;

[0051] (4) Device packaging.

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Abstract

The invention discloses a preparation method of a graphene oxide rare earth complex composite ultraviolet enhanced film. In the method, a kind of rare earth complex fluorescent material with an absorption band of 240-400nm and a PVA polymer are mixed in an ethanol aqueous solution to prepare a high-efficiency ultraviolet light film. Strengthen the film, and prepare the corresponding film-enhanced CCD. Based on this, the UV-enhanced thin film prepared by this method has broad application prospects in photodetection, especially in ultraviolet detection.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection materials, and in particular relates to a preparation method of a graphene oxide rare earth complex composite ultraviolet enhanced film. Background technique [0002] Most of the detector devices used in the field of ultraviolet detection are vacuum multiplier devices, their quantum efficiency is only 10-20%, and their working life is short, which seriously affects the application of such devices. [0003] With the development of new wide-bandgap ultraviolet semiconductor imaging devices, two typical sun-blind ultraviolet semiconductor detectors, GaN and SiC, have emerged. This type of UV detector has the advantages of high quantum efficiency, high temperature resistance and chemical corrosion resistance. However, the preparation process of its materials and devices is complex and extremely demanding. Although it has good performance, it is very difficult to quickly popularize and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L29/04C08K5/00C08J5/18C09K11/02C09K11/06
Inventor 陆红波李志远夏祥夏果王国栋
Owner HEFEI UNIV OF TECH