Silver film etchant composition, etching method using same, and metal pattern forming method

Abstract

The invention relates to a silver thin film etching solution composition, an etching method using the same and a metal pattern forming method. The silver thin film etching solution composition comprises an organic acid, an inorganic acid, an etching initiator and the balance of water, and the etching stop index is 0.05 to 0.35.

Description

Technical field [0001] The present invention relates to a silver film etching liquid composition, which utilizes its etching method and a metal pattern forming method comprising organic acid, inorganic acid, etching initiator, and water, and etch termination index of 0.05 to 0.35. Background technique [0002] With the rapid development of the display of a large amount of information, a variety of flat panel displays are developed accordingly, and more attention is developed accordingly. [0003] As an example of such a flat panel display device, a liquid crystal display device (PLASMA Display Panel Device: PDP), a field transmitting display device: FED, electricity Electuminescencedisplay Device: ELD), Organic Light Emitting Diodes: OLED, etc., which is not only a computer and mobile phone such as a notebook, not only in the field of television or video recorders, but also in computer and mobile phones such as notebooks. It is used in a variety of uses. These flat-panel display ...

AI Technical Summary

Problems solved by technology

In the case of using a conventional etchant as such an etchant, floating or peeling of the wiring occurs due to excessive etching of the silver (Ag) or uneven etching of the silver (Ag), and the side profile of the wiring is poor. Difference

[0008] In addition, it is difficult to realize low skew (LOW skew) for high resolution

[0009] In particular, silver (Ag) is a metal that is easily reduced, and it is etched without residue due to its fast etching speed, but at this time, no etching between the upper and lower parts occurs due to its fast etching speed The speed is poor, it is difficult to form a taper angle after etching and it is difficult to ensure the straightness of each pattern, so there are many limitations when applying silver to wiring

[0010] In the case where the metal film stands vertically without a taper angle, when an insulating film or subsequent wiring is formed in a subsequent process, a gap may occur between silver (Ag) and the insulating film or wiring, and this Voids cause defects such as electrical short circuits

[0011] As a result, studies to improve etching characteristics have been actively carried out. As a representative example, Korean Patent No. 10-579421 proposes a solution containing nitric acid, phosphoric acid, acetic acid, an auxiliary oxide dissolving agent, and fluorine-containing carbons. The silver etchant composition of surfactant and water, but still can't completely solve Ag overetching problem and re-adsorption problem in this technical field

Therefore, it is required to develop an etchant composition capable of improving the etching properties of silver, and active research has been carried out in response to the request, but an etchant composition having significantly improved etching properties compared with the prior art has not yet been proposed.

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