Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory testing device and method compatible with emmc protocol and sd protocol

A memory test and memory technology, applied in static memory, instruments, electrical digital data processing, etc., can solve the problem that the test hardware cannot be fully functionally compatible, and achieve the effect of reducing hardware overhead

Active Publication Date: 2021-02-12
珠海妙存科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the problem that the test hardware of eMMC 5.0 / 5.1 and mainstream SDC (SD 3.0) in the prior art cannot be fully functionally compatible, and proposes a memory test device and method compatible with eMMC protocol and SD protocol

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory testing device and method compatible with emmc protocol and sd protocol
  • Memory testing device and method compatible with emmc protocol and sd protocol
  • Memory testing device and method compatible with emmc protocol and sd protocol

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The idea, specific structure and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments and accompanying drawings, so as to fully understand the purpose, scheme and effect of the present invention. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The same reference numbers are used throughout the drawings to indicate the same or similar parts.

[0039] It should be noted that, unless otherwise specified, when a feature is called "fixed" or "connected" to another feature, it can be directly fixed and connected to another feature, or indirectly fixed and connected to another feature. on a feature. In addition, descriptions such as up, down, left, and right used in the application are only relative to the mutual positional relationship of the components of the application in the drawings....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention proposes a memory testing device compatible with the eMMC protocol and the SD protocol, including a test host and a test slave, the test host and the test slave are connected through a universal connector, and the test host includes a master controller, eMMC and SD protocol universal connector and power supply circuit; the test slave includes eMMC test sub-board and SD test sub-board; wherein, the eMMC and SD protocol universal connector can be compatible with eMMC and SD protocol simultaneously and provide will use the above-mentioned The memory of two kinds of agreements is connected to the connecting interface of described master controller and test slave; Described master controller is connected with eMMC and SD protocol common connector and power supply circuit; Described eMMC test sub-board and SD test sub-board are connected with The eMMC and SD protocol universal connectors are connected.

Description

technical field [0001] The invention relates to the field of memory testing, in particular to a memory testing device and method compatible with eMMC protocol and SD protocol. Background technique [0002] Both eMMC memory and SD memory (SDC) are common NAND Flash storage devices. The eMMC memory is usually in the form of BGA package. In embedded application scenarios, it is soldered on the PCB board and cannot be plugged and disassembled at will; SDC is usually in the form of a card. Mobile Storage, can be plugged in at will. [0003] The protocols of eMMC and SDC have many similarities, and the communication protocols of the physical layer are basically the same. Especially before eMMC5.0, the difference between eMMC and mainstream SDC (SD 3.0) is mainly reflected in the slightly different bus line width and power supply mode. Both accesses are based on a master-slave structure, and most hosts are compatible with accessing eMMC and SDC at the same time. Therefore, early...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56G06F13/38
Inventor 温佳强
Owner 珠海妙存科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com