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A Diffusion Characterization Method of Intrinsic Defects in Diamond

An intrinsic defect and diamond technology, applied in Raman scattering, material excitation analysis, preparation of test samples, etc., can solve the problems that the research results have a great influence and cannot guarantee the consistency of defect types

Active Publication Date: 2021-04-02
TAIYUAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the previous research process, the usual method is to find two different types of diamonds, and observe the diffusion of the generated defects in them after irradiating them. Will introduce other uncontrollable influencing factors, such as defect concentration, etc., which have a great impact on the research results

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  • A Diffusion Characterization Method of Intrinsic Defects in Diamond
  • A Diffusion Characterization Method of Intrinsic Defects in Diamond
  • A Diffusion Characterization Method of Intrinsic Defects in Diamond

Examples

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Embodiment 1

[0026] In the first example, the type Ib diamond synthesized by Xi’an Jiaotong University using high temperature and high pressure was selected, and a layer of type IIa diamond was epitaxially grown by microwave plasma chemical vapor deposition (MPCVD) technology to study the specific defect—neutral vacancy GR1 The specific analysis process of the diffusion in Ib and IIa diamonds is as follows.

[0027] A diamond intrinsic defect diffusion characterization method, comprising the following steps:

[0028] S1. Perform pretreatment on the type Ib diamond sample, the pretreatment includes pickling, cutting, polishing and ultrasonic cleaning, wherein the ultrasonic cleaning agent is alcohol, the ultrasonic working frequency is 40KHz, and the ultrasonic cleaning time is 30 min to obtain the size It is: a diamond standard sample with length 4mm*width 4mm*thickness 0.3mm. The upper and lower surfaces of the diamond standard sample are smooth and flat, which will be used later;

[002...

Embodiment 2

[0034] The diamond material selected in this example 2 is provided by Heilongjiang Jixihao New Energy Materials Co., Ltd., and it is boron-doped diamond synthesized by HTHP. 350°C, the holding time is 30min; the specific analysis process is as follows:

[0035] S1. Carry out pretreatment on the diamond sample, cut the purchased diamond to obtain a sample with a size of 2 mm in length × 2 mm in width × 0.5 mm in thickness, and polish, pickle and ultrasonically clean the cut diamond sample, wherein, The ultrasonic cleaning agent is alcohol, the ultrasonic working frequency is 40KHz, and the ultrasonic cleaning time is 30 minutes. The upper and lower surfaces of the diamond standard sample are smooth and flat, which will be used later;

[0036] S2. Use a transmission electron microscope JEM-2100 to irradiate a corner of the diamond sample prepared in step S1 with electrons near the valve energy, the irradiation voltage is 200KeV, and the irradiation dose is 5×10 17 e·cm 2 , art...

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Abstract

The invention relates to a diamond intrinsic defect diffusion characterization method, and belongs to the technical field of diamond intrinsic defect analysis methods. The technical problem that the influence is large in the diffusion process of diamond intrinsic defects is solved. The method includes the following steps that S1, a diamond sample is pretreated; S2, the diamond sample is subjectedto electron irradiation, the diamond intrinsic defects are artificially manufactured, and a photoluminescence spectrum is adopted to select one intrinsic defect type as a research object; S3, a layerof IIa type diamond epitaxially grows on the surface of the diamond sample irradiated in S2; S4, the double-layer diamond sample subjected to epitaxial growth in S3 is annealed, and the intrinsic defect selected in S2 is diffused in the double-layer diamond; S5, a raman spectrometer is used for carrying out photoluminescence depth surface scanning on the irradiation area of the diamond sample subjected to annealing treatment in S4, and the diffusion situation of the diamond intrinsic defects in the double-layer diamond is observed. The method can be used for clearly observing the action of thepinning effect during intrinsic defect diffusion.

Description

technical field [0001] The invention belongs to the technical field of diamond intrinsic defect analysis methods, in particular to a diamond intrinsic defect diffusion characterization method. Background technique [0002] During the growth process of diamond crystals and the irradiation treatment of semiconductor devices in the later stage, some microscopic defects will occur, including intrinsic defects such as interstitial atoms and vacancies, as well as some types of impurity defects and various composite defects composed of them. Microscopic defects have a great influence on the macroscopic performance of diamond semiconductor devices. Therefore, it is necessary to study the formation and diffusion of diamond microscopic defects, as well as the type and degree of diffusion. [0003] Conventional research methods include X-ray diffraction, scanning electron microscopy and other characterization methods. However, due to the properties of diamond such as wide band gap and...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65G01N1/28
Inventor 王凯悦张文晋张宇飞王宏兴田玉明武雅乔力国民周毅郝建英柴跃生
Owner TAIYUAN UNIVERSITY OF SCIENCE AND TECHNOLOGY