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Polishing pad

A polishing pad and polishing layer technology, applied in the field of polishing pads, can solve the problems of reducing NCO content and uneven polishing pads, and achieve the effect of reducing NCO content and improving yield

Active Publication Date: 2019-05-31
HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the above technical problems, to provide a polishing pad that reduces the NCO content on the basis of constant hardness and effectively suppresses the non-uniformity of the polishing pad caused by the "smile curve" and "water ripples".

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Isocyanate-terminated prepolymer preparation

[0035] The prepolymer prepared by hydroquinone-initiated polytetrahydrofuran diol and TDI with an NCO of 7.35% and an aromatic ring content of 13.9%;

[0036] Polishing Pad Preparation

[0037] 100 parts by mass of isocyanate-terminated prepolymer, heated to 80°C, degassed under vacuum (~0.095MPa) for 2 hours, so as to remove the gas and small molecular compounds in the prepolymer; then add 2.17 parts by mass of Nobel's hollow microsphere polymer with an average diameter of 40 microns (brand name 551DE40d42), the hollow microsphere polymer is uniformly dispersed in the prepolymer under stirring, and degassed again under vacuum (~0.095MPa) for 2 hours, and then Cool down to 50°C and set aside;

[0038] The MOCA of 20.34 mass parts is heated up to 116 ℃, makes it melt into clear transparent liquid completely;

[0039] The prepolymer is mixed with the curing agent under high-speed shear, and then cast into a cylindrical mol...

Embodiment 2～14

[0048] Except for the selection of isocyanate-terminated prepolymers of different aromatic ring types, the rest is the same as in Example 1, under the same density of 0.8, polyether polyols with different aromatic ring contents are used to prepare prepolymers of different NCOs, and then prepared into polishing layers.

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Abstract

The invention discloses a polishing pad and solves the problem of polishing pad inhomogeneity caused by the 'smiling curve' and 'water ripple' of an existing polishing pad. The polishing pad comprisesa polyurethane polishing layer, wherein the polyurethane polishing layer is prepared by a reaction using isocyanate terminated prepolymer, a foaming agent and a curing agent as the main raw materials, the isocyanate terminated prepolymer is prepared by the reaction of polyisocyanate and aromatic-ring-containing polyether polyol, and the aromatic-ring-containing polyether polyol comprises, by masspercentage, 2-20wt% of aromatic ring. The polishing pad has the advantages that NCO content can be lowered on the basis that hardness is guaranteed, and the polishing pad inhomogeneity problem causedby the 'smiling curve' and 'water ripple' can be inhibited effectively.

Description

technical field [0001] The invention relates to the technical field of polishing, in particular to a polishing pad. Background technique [0002] As the feature size of integrated circuits develops towards the deep nanometer process, the feature size becomes smaller and smaller, and the defects caused by the CMP process become more and more prominent in the advanced process, even to the extent that it seriously affects the performance of the chip. For this reason, as one of the four core materials of the CMP process, the pursuit of the ultimate performance of the polishing pad is an eternal topic in the research and development of the polishing pad. For the performance indicators of polishing pads, the ultimate stability and uniformity have gained more and more consensus in the CMP field. For the stability and uniformity requirements of polishing pads, the macro indicators such as hardness, density, compression ratio, and compression recovery rate between different batches ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G18/76C08G18/48C08G18/32C08G18/10C08J9/32C08J9/30B24B37/24
Inventor 罗乙杰刘敏朱顺全
Owner HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD