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a polishing pad

A polishing pad and polishing layer technology, applied in the field of polishing pads, can solve the problems of uneven polishing pads, reduce NCO content, etc., and achieve the effect of reducing NCO content and improving yield

Active Publication Date: 2021-09-28
HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the above technical problems, to provide a polishing pad that reduces the NCO content on the basis of constant hardness and effectively suppresses the non-uniformity of the polishing pad caused by the "smile curve" and "water ripples".

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Isocyanate-terminated prepolymer preparation

[0035] Get the prepolymer prepared by polytetrahydrofuran diol and TDI that NCO is 7.35%, aromatic ring content is 13.9% hydroquinone initiation;

[0036] Polishing Pad Preparation

[0037] 100 parts by mass of isocyanate-terminated prepolymer, heated to 80°C, degassed under vacuum (~0.095MPa) for 2 hours, so as to remove the gas and small molecular compounds in the prepolymer; then add 2.17 parts by mass of Nobel's hollow microsphere polymer with an average diameter of 40 microns (grade 551DE40d42), the hollow microsphere polymer is uniformly dispersed in the prepolymer under stirring, and degassed again under vacuum (~0.095MPa) for 2 hours, and then Cool down to 50°C and set aside;

[0038] The MOCA of 20.34 mass parts is heated up to 116 ℃, makes it melt into clear transparent liquid completely;

[0039] The prepolymer is mixed with the curing agent under high-speed shear, and then cast into a cylindrical mold to form...

Embodiment 2~14

[0048] Except for the selection of isocyanate-terminated prepolymers of different aromatic ring types, the rest is the same as that of Example 1, under the same density of 0.8, polyether polyols with different aromatic ring contents are used to prepare prepolymers of different NCOs, and then prepared into polishing layers.

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Abstract

The invention discloses a polishing pad, which solves the problem of inhomogeneity of the polishing pad caused by "smile curve" and "water ripple" in the existing polishing pad. The polishing pad of the present invention contains a polyurethane polishing layer, and the polyurethane polishing layer is prepared by reacting an isocyanate-terminated prepolymer, a foaming agent and a curing agent as main raw materials, and the isocyanate-terminated prepolymer is made of polyisocyanate and containing The aromatic ring polyether polyol is reacted, wherein the aromatic ring-containing polyether polyol contains 2% to 20% by weight of aromatic rings. The invention can reduce the NCO content on the basis of ensuring the hardness, and effectively suppress the inhomogeneity of the polishing pad caused by the "smile curve" and "water ripple".

Description

technical field [0001] The invention relates to the technical field of polishing, in particular to a polishing pad. Background technique [0002] As the feature size of integrated circuits develops towards the deep nanometer process, the feature size becomes smaller and smaller, and the defects caused by the CMP process become more and more prominent in the advanced process, even to the extent that it seriously affects the performance of the chip. For this reason, as one of the four core materials of the CMP process, the pursuit of the ultimate performance of the polishing pad is an eternal topic in the research and development of the polishing pad. For the performance indicators of polishing pads, the ultimate stability and uniformity have gained more and more consensus in the CMP field. For the stability and uniformity requirements of polishing pads, the macro indicators such as hardness, density, compression ratio, and compression recovery rate between different batches ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G18/76C08G18/48C08G18/32C08G18/10C08J9/32C08J9/30B24B37/24
Inventor 罗乙杰刘敏朱顺全
Owner HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD