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Graphene-based field effect transistor nitrate sensor

A technology of nitrate sensor and alkenyl field, which is applied in the field of chemical sensors, can solve the problems of long time consumption and consumption of chemical reagents, and achieve the effects of low detection limit, good chemical stability and high selectivity

Inactive Publication Date: 2019-06-11
TONGJI UNIV
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Problems solved by technology

With people's increasing environmental concerns and demands, the rapid detection and real-time monitoring of water eutrophication pollution indicators has become an inevitable requirement of the development of the times, while the conventional nitrate detection method consumes chemical reagents and takes a long time, which is not suitable for Real-time, in-situ monitoring of nitrate in water

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  • Graphene-based field effect transistor nitrate sensor
  • Graphene-based field effect transistor nitrate sensor
  • Graphene-based field effect transistor nitrate sensor

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Embodiment

[0028] refer to Figure 1-2 As shown, a graphene field effect transistor nitrate sensor is composed of a silicon gate 4 and a silicon oxide layer 3 deposited on the silicon gate 4, and a source 5 and a drain are formed on the silicon oxide layer 3 by photolithography 6 Gold electrode pairs, graphene nanosheets 2 are deposited on the interdigitated electrode area between the gold electrode pairs, and benzyltriethylammonium chloride is modified on the graphene nanosheets 2 as the probe layer 1 .

[0029] The specific manufacturing process of the graphene field effect transistor nitrate sensor of the present invention is as follows: a drop of diluted graphene oxide (GO) suspension (1 μL, 0.0001 mg / mL) is dropped on the interdigital electrode area, and irradiated by an infrared lamp for 1 min Dry to form a graphene oxide layer. Next, it was placed in an argon atmosphere and annealed in a tube furnace at a temperature of 400 °C for 1 h to reduce the graphene oxide (GO) layer to a ...

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Abstract

The invention relates to a graphene-based field effect transistor nitrate sensor. The graphene-based field effect transistor nitrate sensor comprises a grid electrode (4), a source electrode (5) and adrain electrode (6), wherein the grid electrode (4) is a silicon slice, the surface of the grid electrode (4) is coated with a silicon oxide layer (3), and the source electrode (5) and the drain electrode (6) are formed on the surface of the silicon oxide layer (3); the source electrode (5) and the drain electrode (6) are connected through a graphene nanosheet layer (2); and the surface of the graphene nanosheet layer (2) is decorated with benzyl triethyl ammonium chloride to serve as a probe layer (1). According to the graphene-based field effect transistor nitrate sensor, compared with theprior art, the detection limit of nitric acid in water is low, the selectivity is high, and the transient response can be realized; and the cost is low, the chemical stability is good, and the reutilization can be achieved.

Description

technical field [0001] The invention relates to a chemical sensor, in particular to a graphene-based field effect transistor nitrate sensor. Background technique [0002] In nature, nitrate is the main form of dissolved nitrogen, and it is also the main factor causing eutrophication of water bodies. With people's increasing environmental concerns and demands, the rapid detection and real-time monitoring of water eutrophication pollution indicators has become an inevitable requirement of the development of the times, while the conventional nitrate detection method consumes chemical reagents and takes a long time, which is not suitable for Real-time and in-situ monitoring of nitrate in water. [0003] The field effect transistor (FET) sensor is a semiconductor resistive sensor. Due to the rapid development of the field of materials in recent years, especially the continuous innovation and breakthrough of nanomaterials, this sensor has received more and more attention and in-d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
Inventor 毛舜傅子鹏陈晓燕
Owner TONGJI UNIV
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