Proximity exposure method and device

Abstract

The embodiment of the invention provides a proximity exposure method and device. The method includes the following steps: acquiring the position deviation between the projection of a first alignment mark of a current mask on a substrate and a second alignment mark on the substrate, wherein the position deviation includes transverse offset, longitudinal offset and rotation angle offset; and adjusting the positions of the mask and the substrate according to the current position deviation, and executing the step of acquiring the position deviation between the projection of the first alignment mark of the current mask on the substrate and the second alignment mark on the substrate again until the projection of the first alignment mark on the substrate is consistent with the second alignment mark on the substrate in position. The position deviation acquired in the embodiment of the invention is closer to the actual deviation value between the mask and the substrate. Real-time alignment canbe realized, and the alignment accuracy can be improved.

Description

technical field [0001] The embodiments of the present invention relate to the field of exposure technology, and in particular to a proximity exposure method and equipment. Background technique [0002] Proximity exposure means that the workpiece coated with the photosensitive agent is approached to the mask with a gap of several 11 μm to several 110 μm relative to the mask, and the exposure light is irradiated on the workpiece through the mask to perform exposure. [0003] In the prior art, the proximity exposure method is to measure the position of the Mark on the mask before each exposure and then perform exposure, and adjust the exposure position by moving the mask and the glass substrate. [0004] However, the exposure accuracy of the existing proximity exposure method is poor, above ±1.5um, and cannot be applied to the production requirements of high-precision products, such as the array process of the TFT industry. Contents of the invention [0005] Embodiments of t...

AI Technical Summary

Problems solved by technology

[0004] However, the exposure accuracy of the existing proximity exposure method is poor, above ±1.5um, which cannot be applied to the production requirements of high-precision products, such as the array process of the TFT industry

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