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Method of suppressing top layer memory layer programming crosstalk for 3D NAND memory

A 3D NAND and programming crosstalk technology, applied in read-only memory, static memory, information storage, etc., can solve problems such as crosstalk and threshold voltage drift

Active Publication Date: 2019-06-25
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the prior art, when programming a certain storage unit (target storage unit) in the storage layer, especially the top storage layer (top storage layer), the storage units other than the target storage unit in the top storage layer will be Crosstalked by programming, the threshold voltage will drift

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  • Method of suppressing top layer memory layer programming crosstalk for 3D NAND memory
  • Method of suppressing top layer memory layer programming crosstalk for 3D NAND memory

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Embodiment Construction

[0021] As stated in the background technology, in the prior art, when programming a certain storage unit (target storage unit) in the storage layer, especially the top storage layer (top storage layer), the target storage unit in the top storage layer The memory cells other than will be crosstalked by programming, and the threshold voltage will be shifted.

[0022] Research has found that when programming a certain memory cell (target memory cell) in the top memory layer, it is necessary to apply a high programming voltage to the entire control gate corresponding to the top memory layer, that is, between the target memory cells in the top memory layer. A high programming voltage will also be applied to the control gates corresponding to the external memory cells, so that there will be a large drop in potential between other memory cells other than the target memory cell in the top memory layer and the word line, causing the external parts to heat Electrons will be injected int...

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Abstract

The invention discloses a method of suppressing top layer memory layer programming crosstalk for a 3D NAND memory. The 3D NAND memory comprises a plurality of stacked memory layers and a plurality ofstacked pseudo memory layers located on the memory layers; the uppermost memory layer in the plurality of stacked memory layers is a top memory layer; a pseudo memory layer adjacent to the top memorylayer is a bottom pseudo memory layer; each memory layer comprises a plurality of memory units; each pseudo memory layer comprises a plurality of pseudo memory units with the same arrangement as the plurality of memory units; the plurality of memory units and the plurality of pseudo memory units in a vertical direction form a memory string; and when a certain memory unit in the top memory layer isprogrammed, the top memory layer and the bottom pseudo memory layer are connected, and the same programming voltage is applied for operation. Thus, the method can prevent programming crosstalk of thetop memory layer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for suppressing programming crosstalk in a top storage layer of a 3D NAND memory. Background technique [0002] NAND flash memory is a better storage device than hard disk drives, and it has been widely used in electronic products as people pursue non-volatile storage products with low power consumption, light weight and high performance. At present, the planar NAND flash memory is close to the limit of practical expansion. In order to further increase the storage capacity and reduce the storage cost per bit, a 3D NAND memory is proposed. [0003] In the 3D NAND memory structure, a stacked 3D NAND memory structure is realized by vertically stacking multiple layers of data storage units. [0004] The existing 3D NAND memory structure includes: a semiconductor substrate; a stack structure in which a control gate and an isolation layer are stacked on the semicond...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11578G11C16/34H10B43/35H10B43/20
CPCG11C16/3422H10B43/35H10B43/20Y02D10/00
Inventor 李达许锋魏文喆贾信磊刘红涛王明
Owner YANGTZE MEMORY TECH CO LTD