Semiconductor processing chamber

Abstract

A semiconductor processing chamber is provided. The semiconductor processing chamber includes a susceptor on which a plurality of wafers are disposed; a showerhead structure opposing the susceptor anddisposed to be spaced apart from the susceptor; a plurality of plates opposing the susceptor and disposed to be spaced apart from the susceptor; and a blocking structure disposed between plates, among the plurality of plates, disposed adjacent to each other, wherein a distance between the showerhead structure and the susceptor is less than a distance between the plurality of plates and the susceptor, and a distance between the blocking structure and the susceptor is less than the distance between the plurality of plates and the susceptor.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority from Korean Patent Application No. 10-2017-0170178 filed in the Korean Intellectual Property Office on December 12, 2017, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The inventive concept relates to a processing chamber, and more particularly, to a semiconductor processing chamber that simultaneously performs deposition processing and plasma processing. Background technique [0004] In order to increase the degree of integration of semiconductor devices without increasing costs, requirements for various material layers forming semiconductor devices have increased. For example, it is necessary to form thinner layers of material with uniform properties in a shorter period of time. Among material layers used in semiconductor devices, there have been material layers formed using various process chambers separated from...

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Problems solved by technology

Therefore, there is a limitation in reducing the time required to form a material layer using various processing chambers separated from each other

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