GaN-HEMT device with sandwich structure and preparation method thereof

Abstract

The invention discloses a GaN-HEMT device with a sandwich structure and a preparation method thereof. The GaN-HEMT device comprises an epitaxial layer and an electrode, the epitaxial layer comprises aGaN channel layer and an AlyGa1-yN barrier layer which are arranged from top to bottom; the electrode comprises a gate electrode, a source electrode, a drain electrode and a field plate electrode, the field plate electrode and the electrode are respectively manufactured at the upper surface and the lower surface of the epitaxial layer, the field plate electrode is extended beyond the area of theepitaxial layer and is connected with the gate electrode to form a sandwich structure, and the source electrode and the drain electrode are respectively located at the two ends of the epitaxial layer.The conductive channel of the device is subjected to field effect control of the lower gate and the upper field plate while the integrity of the conductive channel is ensured. The GaN-HEMT device with a sandwich structure improves the breakdown voltage and the gate swing of the device so as to improve the linearity and the voltage withstand performance of the device.

Description

technical field [0001] The invention relates to a high electron mobility transistor (HEMT), in particular to a GaN-HEMT device with a sandwich structure and a preparation method thereof. Background technique [0002] Power electronic devices are widely used in many fields such as household appliances, industrial equipment, and automotive power supplies. The new generation of power electronic devices requires higher efficiency, higher power density and higher reliability in high-temperature operating environments, which requires devices to have lower on-resistance, higher saturation current and more optimized materials system. At present, silicon-based power devices, such as MOSFETs and IGBTs, are widely used in power electronic devices. However, after long-term development of silicon-based electronic power devices, the performance and the theoretical limit of their materials, the new generation of power electronic devices are facing huge challenges such as high voltage, hi...

AI Technical Summary

Problems solved by technology

[0003] However, whether it is a single-finger low-current GaN-HEMT device or a multi-finger high-current device, most current processes adopt the traditional single-gate structure and field plate structure between the source and drain electrodes, which makes the two-dimensional electron gas Can only be limited by field effects in a single direction, thus limiting the breakdown voltage increase and further reduction in linearity of the device

In response to this problem, the industry and some research institutions have adopted a fin structure to produce a Fin-FET structure. Although the GaN-HEMT device with this structure improves the gate voltage swing and linearity of the device, it sacrifices the gate voltage. At the expense of the width of the effective conductive channel layer, this method reduces the breakdown voltage and power density, while nanoscale lithography increases the operational difficulty of device fabrication

Images