Supercharge Your Innovation With Domain-Expert AI Agents!

Three-dimensional longitudinal one-time programmable memory without separate diode film

A memory and diode technology, applied in the field of one-time programming memory, can solve the problems of large storage well size and low storage density

Inactive Publication Date: 2019-07-16
CHENGDU HAICUN IP TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such a thick diode film is formed in a storage well, the size of the storage well will be large and the storage density will be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional longitudinal one-time programmable memory without separate diode film
  • Three-dimensional longitudinal one-time programmable memory without separate diode film
  • Three-dimensional longitudinal one-time programmable memory without separate diode film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Figure 1A It is the first three-dimensional vertical one-time programming memory (3D-OTP V ) z-x cross-sectional view. It contains a plurality of vertical OTP storage strings (abbreviated as OTP storage strings) 1A, 1B, . . . on the substrate circuit OK and arranged side by side. Each OTP string 1A is perpendicular to the substrate 0 and contains a plurality of vertically stacked OTP memory cells 1aa-1ha.

[0019] The embodiment shown in this figure is an OTP array 10 . The OTP array 10 is a collection of all memory cells sharing at least one address line. It contains a plurality of vertically stacked horizontal address lines (word lines) 8a-8h. After a plurality of storage wells 2a-2d penetrating these horizontal address lines 8a-8h are etched, a layer of antifuse film 6a-6d is covered on the side walls of the storage wells 2a-2d, and filled with conductive material to form a vertical Straight address lines 4a-4d (bit lines). The conductor material can be a metal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a three-dimensional longitudinal one-time programmable memory (3D-OTPV) without a separate diode film. The memory comprises a plurality of horizontal address lines which are vertically stacked, a plurality of storage wells penetrating through the horizontal address lines, an anti-fuse film for covering the side walls of the storage wells, and a plurality of vertical addresslines formed in the storage wells. The storage wells do not contain a separate diode film. The horizontal address lines and the vertical address lines contain different metal materials

Description

technical field [0001] The present invention relates to the field of integrated circuit memory, more specifically, to one-time programmable memory (OTP for short). Background technique [0002] Three-dimensional one-time programming memory (3D-OTP) is a monolithic semiconductor memory that contains multiple vertically stacked OTP memory cells. The storage elements of 3D-OTP are distributed in three-dimensional space, while the storage elements of traditional planar OTP are distributed on a two-dimensional plane. Compared with traditional OTP, 3D-OTP has the advantages of high storage density and low storage cost. In addition, 3D-OTP data has a long lifespan and is suitable for long-term data storage. [0003] US patent application US 2017 / 0148851 A1 (applicant: Hsu; filing date: November 23, 2016) proposes a three-dimensional vertical memory. It contains multiple vertically stacked horizontal address lines, multiple storage wells that penetrate the horizontal address line...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/112G11C17/16G11C17/18
CPCG11C17/16G11C17/18H10B20/20
Inventor 张国飙
Owner CHENGDU HAICUN IP TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com