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Ultra-high-speed dual-frame image acquisition method based on global shutter cmos image sensor

An image sensor and global shutter technology, applied in image communication, components of color TV, components of TV systems, etc., can solve the problems of low time resolution, high cost, complex system, etc., and achieve simple and improved driving system. Low-cost, wide-ranging effects

Active Publication Date: 2021-04-02
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0005] In order to solve the technical problem that the time resolution of the existing high-speed imaging system using CMOS image sensor is relatively low, or the special high-speed imaging system combining CMOS and CCD technology is complex and costly, the present invention provides a global shutter-based CMOS The ultra-high-speed double-frame image acquisition method of the image sensor has the characteristics of high time resolution, simple system, and low cost when the method of the present invention is used to design an ultra-high-speed imaging system

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with accompanying drawing.

[0034] see figure 2 , the ultra-high-speed dual-frame image acquisition method based on the global shutter type CMOS image sensor provided in this embodiment specifically includes the following steps:

[0035] Step 1: Select the figure 1 The global shutter CMOS image sensor with the pixel structure shown in the figure, according to the data sheet of the CMOS image sensor, obtain the key time parameters of the CMOS image sensor, including the minimum control signal pulse width ΔT 1 , the minimum transfer period ΔT 2 , One frame image readout time ΔT 3 ;

[0036] Step 2: According to the key time parameters of the CMOS image sensor and the time resolution requirements of the imaging target, set the minimum exposure time T of the first frame image EXP and the exposure interval time T of two frames of images INT , and T EXP Not less than ΔT1+ΔT2, T INT Not less than ΔT...

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Abstract

In order to solve the technical problems that the time resolution of the existing high-speed imaging system using CMOS image sensor is low, or the special high-speed imaging system combining CMOS and CCD technology is complicated and costly, the present invention provides a global shutter-based CMOS The ultra-high-speed dual-frame image acquisition method of the image sensor has the characteristics of high time resolution, simple system, low cost and the like when the method of the present invention is used to design an ultra-high-speed imaging system. The invention utilizes the independent control signal and circuit structure of the photosensitive area and the floating gate of the global shutter type CMOS image sensor, and realizes the continuous double exposure of the ultra-short exposure and the ultra-short time interval through the associated control of the photosensitive area and the floating gate. Frame image acquisition function.

Description

technical field [0001] The invention relates to an ultra-high-speed double-frame image acquisition method of a CMOS image sensor. Background technique [0002] High-speed cameras based on image sensors are widely used in the field of transient physical process research. There are two main types of image sensors commonly used at present: CCD image sensor and CMOS image sensor. CMOS image sensor has good compatibility with analog circuit and large-scale digital circuit technology due to its processing and manufacturing process, which is convenient for realizing high-precision quantification, high-speed sampling output and other functions inside the sensor. At the same time, the processing technology of CMOS sensor continues to improve, gradually replacing CCD image sensor , become the main sensor for imaging system design. [0003] According to the reset and exposure control signal characteristics of the pixel array, CMOS image sensors are roughly divided into global shutter...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/355
CPCH04N25/57H04N25/76
Inventor 严明黑东炜李斌康李刚刘璐杨少华郭明安
Owner NORTHWEST INST OF NUCLEAR TECH