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Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level

A technology for memory cells and devices, which is applied to devices and fields including ferroelectric memory and access to ferroelectric memory, and can solve problems such as non-volatility

Inactive Publication Date: 2019-08-06
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] FeRAM can use a device architecture similar to volatile memory, but can have non-volatile properties due to the use of ferroelectric capacitors as storage devices

Method used

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  • Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level
  • Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level
  • Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level

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Embodiment Construction

[0019] Hereinafter, various embodiments of the present invention will be explained in detail with reference to the accompanying drawings. The following detailed description refers to the accompanying drawings, which show, by way of illustration, specific aspects and embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized, and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The various embodiments disclosed herein are not necessarily mutually exclusive, as some disclosed embodiments can be combined with one or more other disclosed embodiments to form new embodiments.

[0020] Figure 1A is a schematic diagram of an example circuit 100 including a column of memory cells and sense amplifiers during a read operation, in accordance with an embodiment of the invention. Ci...

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Abstract

Apparatuses and methods are disclosed that include ferroelectric memory and for refreshing ferroelectric memory. An example apparatus includes: a word line; a first memory cell coupled to a first digit line and stores a first data on the first digit line responsive to the word line in an active state; a second memory cell coupled to a second digit line and stores a second data on the second digitline responsive to the word line in the active state. The first digit line is coupled to a first power potential and the second digit line is coupled to a second power potential in a refresh operation.

Description

technical field [0001] The present application relates to devices and methods including ferroelectric memories and for refreshing ferroelectric memories. Background technique [0002] Memory devices are widely used to store information in various electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, a binary device has two states, usually represented by a logic "1" or a logic "0". In other systems, more than two states may be stored. To access stored information, the electronic device may read or sense the state of storage in the memory device. To store information, electronic devices may write or program states in memory devices. [0003] Various types of memory devices exist, including random access memory (RAM), read only memory (ROM), dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), ferroelectric RAM (FeRAM), magnetic R...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22
CPCG11C11/2257G11C11/2275G11C11/2259G11C11/221G11C11/2273G11C11/2293G11C11/2253
Inventor 永田亨一
Owner MICRON TECH INC