Multi-layer memory and its manufacturing method

Abstract

The embodiment of the invention discloses a multi-layer memory and a manufacturing method thereof. The multi-layer memory includes: a stack structure of multiple storage layers, the storage layer has a first edge region and a second edge region; a first circuit layer, located on the first end face of the stack structure and has a word line driver; the word line driver passes through the drive line Connected with the storage layer; the drive line of the mth storage layer, including: the first part, connecting the first edge area of ​​the mth storage layer and the word line driver; the second part, connected with the word line driver; the third part, parallel In the first part and through the second circuit layer, wherein the second circuit layer is located on the second end surface of the stacked structure, and the second end surface is opposite to the first end surface; the fourth part is located on the second circuit layer; the fifth part, It is connected with the fourth part and penetrates the second circuit layer; the sixth part is connected with the fifth part and is parallel to the fourth part; the seventh part is respectively connected with the sixth part and the second edge area of ​​the mth storage layer connect.

Description

technical field [0001] The invention relates to the technical field of storage, in particular to a multi-layer memory and a manufacturing method thereof. Background technique [0002] Double word line (WL) driven double-sided word line driven multilayer memory. In the memory of the related art, if the word line driver and the page buffer are arranged on the same circuit layer, but the wiring resources of the two conflict, in order to realize the word line driver and the page buffer on the same circuit layer without metal traces Due to the conflict of line resources, the word line driver will be arranged outside the circuit layer corresponding to the storage area, which will increase the area of ​​the storage chip in the lateral direction. Contents of the invention [0003] In view of this, the embodiments of the present invention expect to provide a multi-layer memory and a manufacturing method thereof. [0004] Technical scheme of the present invention is realized like ...

AI Technical Summary

Problems solved by technology

In the memory of the related art, if the word line driver and the page buffer are arranged on the same circuit layer, but the wiring resources of the two conflict, in order to realize the word line driver and the page buffer on the same circuit layer without metal traces The conflict of line resources will place the word line driver on the outside of the circuit layer corresponding to the storage area, which will increase the area of ​​the storage chip in the lateral direction

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