Unlock instant, AI-driven research and patent intelligence for your innovation.

Film thickness measurement method and system, and chemical-mechanical polishing device

A measurement method and film thickness technology, which is applied in the field of chemical mechanical polishing, can solve the problems of low accuracy and low measurement accuracy, and achieve the effect of improving measurement accuracy and fast and accurate online film thickness measurement

Active Publication Date: 2019-09-06
TSINGHUA UNIV
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the small thickness of the film layer, the order of magnitude is even smaller in microns, resulting in low measurement accuracy and low accuracy.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film thickness measurement method and system, and chemical-mechanical polishing device
  • Film thickness measurement method and system, and chemical-mechanical polishing device
  • Film thickness measurement method and system, and chemical-mechanical polishing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The technical solutions of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings. The examples described here are specific implementations of the present invention and are used to illustrate the concept of the present invention; these descriptions are all explanatory and exemplary, and should not be construed as limiting the implementation of the present invention and the protection scope of the present invention . In addition to the embodiments described here, those skilled in the art can also adopt other obvious technical solutions based on the claims of the application and the contents disclosed in the specification, and these technical solutions include adopting any modifications made to the embodiments described here. Obvious alternatives and modified technical solutions.

[0036] In order to illustrate the technical solutions of the present invention, specific examples are used below to illustra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is suitable for the technical field of the chemical-mechanical polishing, and provided a film thickness measurement method and system, and a chemical-mechanical polishing device. The method comprises the following steps: acquiring a mapping relation between an output signal and a wafer film thickness according to offline collected wafer film thickness information and a signal value output when performing dynamic measurement by using a film thickness sensor in a polishing cycle; and converting the signal value output when performing online measurement by the film thickness sensorinto a film thickness value by utilizing the mapping relation.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to a method and system for measuring film thickness and a chemical mechanical polishing device. Background technique [0002] Integrated circuits are generally formed by sequentially depositing conductive, semiconducting or insulating layers on a silicon wafer. Thus, a film formed by the filler layer is deposited on the surface of the wafer. During the manufacturing process, it is necessary to continuously planarize the filler layer until the patterned top surface is exposed, so as to form conductive paths between the raised patterns. [0003] Chemical Mechanical Planarization (CMP) is a means to obtain global planarization in integrated circuit manufacturing. Such as figure 1 As shown, the chemical mechanical polishing unit includes a polishing head 10 , a polishing disc 20 , a liquid supply module 30 and a loading module (Loadcup) 40 . Before ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01B7/06B24B37/005B24B37/04
CPCB24B37/0053B24B37/042G01B7/06G01B7/105
Inventor 路新春田芳馨王同庆
Owner TSINGHUA UNIV