Converter circuit fault detection method, readable storage medium and converter
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- SHENZHEN HOPEWIND ELECTRIC CO LTD
- Publication Date
- 2019-09-17
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Abstract
Description
technical field
[0001] The invention relates to the technical field of power electronics, in particular to a converter circuit fault detection method, a readable storage medium, and a converter. Background technique
[0002] IGBT (Insulated Gate Bipolar Transistor) and IGCT (Integrated Gate Commutated Thyristor) are the two most commonly used fully-controlled devices in the field of AC-DC AC. IGBT is a voltage-controlled device. Extremely increase the control voltage to control the turn-on and turn-off of the device, which can turn off the short-circuit current, and the device has weak overload capacity. IGCT is a current-controlled device. It controls the on and off of the device by injecting current at the gate. Its ability to turn off the current is limited, it cannot turn off the short-circuit current, and the device has a strong overload capability.
[0003] Such as figure 1 Shown is a two-level converter composed of fully controlled devices. In the figure, AT1, AT2,...