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Crystalline solar cell and method for producing such solar cell

A solar cell and crystallization technology, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as long-term stability reduction, degradation of optically transparent materials of semiconductor materials, and high cost

Active Publication Date: 2022-03-25
MEYER BURGER (GERMANY) GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Burn-through, however, results in a strong thermal load on the layer stack, which can lead not only to undesired effects in the semiconductor material but also to a degradation of the electrically conductive optically transparent material, which in turn limits the electrical contacting of the semiconductor material and the performance of the solar cell. improve
Furthermore, the burn-through step is associated with high cost and time
Additionally, adhesion problems with metals on conductive optically transparent materials have been observed, which lead to reduced long-term stability and ultimately solar cell failure

Method used

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  • Crystalline solar cell and method for producing such solar cell
  • Crystalline solar cell and method for producing such solar cell
  • Crystalline solar cell and method for producing such solar cell

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Embodiment Construction

[0046] figure 1 A first embodiment of a crystalline solar cell ( 1 ) according to the invention is shown in cross section. The solar cell (1) comprises a single crystal semiconductor material (10), for example made of silicon, in which a first region (101) and a second region (102) are formed, said first region and the second region The two regions are each doped such that a pn junction exists between the first region (101) and the second region (102). In the present case, the first region (101) is n-type doped, has a sheet resistance in the range of 100 to 200Ω (Ω / sq) and serves as the emitter of the solar cell (1), while the second region ( 102) is P-type doped. The semiconductor material (10) has a first surface (101a) and a second surface (102a), only the first region (101) of the semiconductor material (10) adjoins the first surface and the first surface is the front side of the solar cell (1) ( side facing the light), only the second region (102) of semiconductor mate...

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Abstract

The invention relates to a single-sided or double-sided crystalline solar cell, on the front side of which a first surface passivation layer is arranged over the entire surface directly on the semiconductor interface and above which a first optically non-transparent conductive material is arranged in a first lateral region The first optically transparent conductive material is provided as a front contact and only in the second lateral region. The first optically transparent electrically conductive material is in this case electrically conductively connected to the front contact and to the first region of the semiconductor material. The method according to the invention provides that the first optically transparent electrically conductive material is not applied until after the first optically non-transparent electrically conductive material is applied, so that burn-through of the front contacts is avoided. It is particularly advantageous to apply the first optically transparent conductive material as the doped metal oxide directly before the deposition of the first antireflection layer on the solar cell front side by means of PECVD and in the same apparatus without interrupting the vacuum.

Description

technical field [0001] The invention relates to a crystalline solar cell made of semiconductor material with a transparent conductive layer on the front side between electrical contacts and a method for producing such a solar cell. Background technique [0002] A conventional silicon solar cell consists of two oppositely doped regions of monocrystalline or polycrystalline semiconductor material. In this case by adding a dopant to the semiconductor material or by applying a layer made of the same semiconductor material to a first layer of semiconductor material with the second layer having a doping opposite to that of the first layer, in both A direct pn junction is formed between the regions. Such solar cells are also referred to as homogeneous cells, in contrast to heterogeneous cells which are made of different semiconductor materials or which also have an intrinsic layer (pin junction) between n-layer and p-layer. Another structure of the semiconductor, such as an amorp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/068
CPCH01L31/02167H01L31/02168H01L31/068H01L31/022466H01L31/022441H01L31/1868Y02E10/547H01L31/022425H01L31/022475H01L31/022483H01L31/1884H01L21/02274H01L21/0262H01L21/02172H01L21/28562
Inventor H-P·施佩利希G·爱尔福特T·格罗塞M·柯尼希
Owner MEYER BURGER (GERMANY) GMBH