A method and device for predicting surface topography after cmp

A technology of surface topography and prediction method, applied in the field of post-CMP surface topography prediction, can solve problems such as difficult to apply post-surface topography prediction, prediction deviation, etc., achieve accurate post-CMP surface topography prediction and defect prediction, and improve accuracy Effect

Active Publication Date: 2021-07-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

When using the current post-CMP surface topography prediction method to predict the planarized topography of small-sized device wafers, there is a large deviation in the prediction, which is difficult to apply to the post-CMP surface topography prediction of small-sized device wafers

Method used

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  • A method and device for predicting surface topography after cmp
  • A method and device for predicting surface topography after cmp
  • A method and device for predicting surface topography after cmp

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0040] As described in the background technology, with the continuous shrinking of the feature size of the device, after the manufacturing process enters the process node below 28 nanometers, using the current post-CMP surface topography prediction method, the flattened topography of the crystal element of the s...

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Abstract

The invention provides a method and device for predicting surface morphology after CMP. When obtaining the grinding removal rate of materials to be removed, the contact pressure model adopted is the value between the contact pressure distribution of abrasive particles and the step height difference, line width and spacing The model fully considers the influence of abrasive particles on the removal rate of the material to be removed, so that it can describe the actual process of CMP more objectively and truly, so that more accurate predictions of surface morphology and defects after CMP can be achieved, and CMP can be improved. The accuracy of the prediction of the back surface topography is especially suitable for the prediction of the back surface topography of small-sized device wafers after CMP, and provides guidance for parameter setting and design optimization in the CMP process.

Description

technical field [0001] The invention relates to the technical field of integrated circuit simulation modeling, in particular to a method and device for predicting surface topography after CMP. Background technique [0002] Chemical Mechanical Planarization (CMP) is an important part of fine surface processing in semiconductor manufacturing technology, and has become the most widely used planarization technology in the era of very large scale integrated circuits. , so that the grinding surface reaches a nano-level smoothness. [0003] With the continuous shrinking of the feature size of the device, after the manufacturing process enters the process node below the 28nm level, the problem of the flatness of the wafer has become increasingly prominent, and the process fault tolerance has also been reduced to the nanometer level. By predicting the topography of the chip surface after CMP, the reading changes on the surface of the polished wafer can be obtained, and the real-time...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/306G01R31/26
CPCG01R31/2601H01L21/30625H01L22/12
Inventor 曹鹤陈岚孙艳张贺彩虹
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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