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A kind of igbt module of aluminum silicon carbide

An aluminum silicon carbide and silicon carbide technology, which is applied in the field of aluminum silicon carbide IGBT modules, can solve the problems of difficult processing, high manufacturing cost, deformation and desoldering of welded chips, and achieves good heat dissipation effect, high strength and high reliability. Effect

Active Publication Date: 2021-09-07
ANHUI HANSHENG NEW METAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention mainly provides an aluminum silicon carbide IGBT module, which is used to solve the above-mentioned background technology, because the thermal expansion rate of the substrate material of the IGBT module and the thermal expansion rate of the electronic chip have a certain gap, so that the substrate on the The welding chip has deformation and desoldering, and some composite materials have just met the thermal expansion coefficient and thermal conductivity, but the manufacturing cost is high and the processing is difficult.

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  • A kind of igbt module of aluminum silicon carbide

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Embodiment 1

[0023] Embodiment 1, an IGBT module of aluminum silicon carbide, comprising 62-78% of a silicon carbide preform and 22-38% of an aluminum-silicon alloy, the aluminum-silicon alloy is immersed in the silicon carbide preform, and the silicon carbide The prefabricated body is compounded by aluminum silicon carbide coarse powder, aluminum silicon carbide fine powder, aluminum silicon carbide micro powder and binder according to mass percentage.

[0024] The particle diameters of the aluminum silicon carbide coarse powder, the aluminum silicon carbide fine powder and the aluminum silicon carbide fine powder are 120-180um, 30-63um, and 6-10um, respectively.

[0025] The slurry formula of the silicon carbide preform: 45% to 65% by mass ratio of aluminum silicon carbide coarse powder (particle size range D 50 ≥120um), aluminum silicon carbide fine powder 15%~25% (particle size range D 50 ≤60um), aluminum silicon carbide powder 8% ~ 12% (particle size range D 50 ≤15um), pore-forming ...

Embodiment 2

[0026] Embodiment 2, the technical scheme of a preparation method of an aluminum silicon carbide IGBT module is as follows:

[0027] The first step: according to the mass ratio of aluminum silicon carbide coarse powder 45% ~ 65% (particle size range D 50 ≥120um), aluminum silicon carbide fine powder 15%~25% (particle size range D 50 ≤60um), aluminum silicon carbide powder 8% ~ 12% (particle size range D 50 ≤15um), pore-forming agent starch 5%~12%, binder aluminum dihydrogen phosphate aqueous solution (content 9%~15%), mechanical stirring for 6-10 hours, the mixed slurry of aluminum silicon carbide preform;

[0028] Step 2: Two-way compression molding is adopted, and the molding pressure is 50-200MPa. Sintering process: Heating at 1.5-2.5°C / min to 500°C-650°C, holding for 1.5-3 hours, cooling with the furnace to obtain a porous silicon carbide preform, with a volume fraction of 62%-78%, and preparing a porous structure of aluminum Silicon carbide preform;

[0029] Step 3: M...

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Abstract

The invention provides an IGBT module with a high volume fraction of aluminum silicon carbide and a preparation method thereof, comprising 62-78% of a silicon carbide preform and 22-38% of an aluminum-silicon alloy, and the silicon carbide preform is made of aluminum silicon carbide coarse powder , aluminum silicon carbide fine powder, aluminum silicon carbide fine powder and binder are compounded according to volume percentage. In the invention, the silicon carbide prefabricated body and the aluminum-silicon alloy are impregnated to synthesize the aluminum-silicon carbide IGBT module at high temperature, thereby reducing the expansion rate of the IGBT module and enhancing the heat dissipation and strength of the IGBT module.

Description

technical field [0001] The invention relates to the technical field of composite materials, in particular to an aluminum silicon carbide IGBT module. [0002] technical background [0003] With the development of semiconductor technology, the integration of high-power module chips (such as IGBT power modules) and chip power continue to increase, and the operating temperature of IGBT chips also continues to rise. The requirements for corresponding device packaging materials, especially heat dissipation substrates, are also increasing It is getting higher and higher, not only requiring the heat dissipation substrate to have a lower linear expansion coefficient that matches the electronic chip, but also to meet the needs of lightweight, requiring the density of the material to be as low as possible, and the modulus of elasticity to be as high as possible, but also to It has high thermal conductivity and has certain machinability. [0004] The thermal expansion coefficient of a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/14H01L23/373
CPCH01L23/14H01L23/3733
Inventor 严海龙
Owner ANHUI HANSHENG NEW METAL TECH