Check patentability & draft patents in minutes with Patsnap Eureka AI!

Solid-state photodetector

A photodetector and solid-state technology, which is applied in the direction of electric solid-state devices, semiconductor devices, televisions, etc., can solve the problem of unstable sensitivity and achieve the effect of suppressing interference

Inactive Publication Date: 2019-10-11
SHIMADZU SEISAKUSHO CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the surface-incident solid-state imaging device described in US Patent Application Publication No. 2010 / 0148289, there is a problem that the light reflected on the surface of the light-receiving part is different from the light-incident surface of the surface film. (A part different from the part where the reflected light is incident) The incident light interferes (multiple reflection interference), and the sensitivity becomes unstable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state photodetector
  • Solid-state photodetector
  • Solid-state photodetector

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0056] refer to Figure 1 to Figure 10 The structure of the solid-state photodetector 10 according to the first embodiment of the present invention will be described.

[0057] (Structure of solid-state photodetector)

[0058] The solid-state photodetector 10 is composed of, for example, a CMOS (complementary metal oxide semiconductor: complementary metal oxide semiconductor) sensor and a CCD (Charge Coupled Device: charge coupled device) sensor including a light receiving unit 11 (photodiode). In the first embodiment, the solid-state photodetector 10 is a surface incidence type in which light is incident from the side where the wiring pattern 8 is provided.

[0059] Such as figure 1 As shown in FIG. 1 , a surface-incident type solid-state photodetector 10 includes a light-receiving unit 11 . Such as figure 2 As shown, a plurality of light receiving units 11 are provided. The plurality of light receiving units 11 are arranged in a matrix in plan view (when viewed from th...

no. 2 approach

[0087] Next, refer to Figure 11 Next, a second embodiment will be described. In this second embodiment, the functional layer 43 has a cylindrical lens shape.

[0088] Such as Figure 11 As shown, in the solid-state photodetector 40 of the second embodiment, the functional layer 43 has a cylindrical lens shape that gives curvature to the wavefront in a uniaxial direction with respect to a plane wave incident on the functional layer 43 . Specifically, the functional layer 43 has a cylindrical lens shape protruding toward the light-incident side. More specifically, the focal point of the cylindrical lens exists near the light receiving surface 11a. In addition, the functional layer 43 is formed by chiseling or the like on the base layer of the functional layer 43 after forming a base layer (not shown) of the functional layer 43 . In addition, a preformed functional layer 43 may also be bonded to the surface of the surface film 12 .

[0089] In addition, the effects of the s...

no. 3 approach

[0091] Next, refer to Figure 12 A third embodiment will be described. In this third embodiment, the functional layer 93 of one shape (one lens shape) is provided over the plurality of light receiving sections 11 .

[0092] Such as Figure 12 As shown, in the solid-state photodetector 90 of the third embodiment, a single-shaped functional layer 93 is provided so as to cover the plurality of light receiving units 11 arranged in a matrix. Specifically, the functional layer 93 has a substantially circular shape in plan view, and is provided so as to partially cover the plurality of light receiving units 11 arranged in a matrix. In addition, the functional layer 93 has, for example, a convex lens shape. Additionally, it can be done as Figure 12 Like the functional layer 93a indicated by the dotted line, the functional layer 93a is provided so as to cover the entirety of the plurality of light receiving sections 11 arranged in a matrix.

[0093] Alternatively, it could be, fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This solid-state photodetector (10) comprises a functional layer (13) configured such that wavefronts are mutually different in terms of at least one of the traveling direction and the wavefront shape, and the wavefronts do not interfere with each other.

Description

technical field [0001] The invention relates to a solid-state light detector. Background technique [0002] Conventionally, a solid-state imaging device (solid-state photodetector) including a light receiving unit that outputs a signal corresponding to the intensity of received light has been disclosed. For example, US Patent Application Publication No. 2010 / 0148289, Japanese Patent Application Laid-Open No. 2016-58507, and Japanese Kokai Publication No. 2013-518414 disclose such solid-state photodetectors. [0003] A surface-incident solid-state imaging device described in US Patent Application Publication No. 2010 / 0148289 includes a semiconductor substrate, a light-receiving surface, and a reading wiring section disposed on the light-receiving surface. The intensity of the corresponding signal to the light-receiving part. In addition, the light receiving unit and the reading wiring unit are covered with a surface film, and light enters the light receiving unit through th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/14H01L31/0232H04N5/369
CPCH01L27/14627H01L31/02366H01L31/02327H01L27/14H01L31/0232H04N25/70
Inventor 柄泽朋宏古宫哲夫森谷直司广瀬竜太
Owner SHIMADZU SEISAKUSHO CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com