Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of preparation method of stannous tungstate film

A stannous tungstate and thin film technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of low STH efficiency and excessive band gap, and achieve simple operation and large-scale production. The effect of commercial applications

Active Publication Date: 2021-08-03
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large band gap of the material, its STH efficiency is still very low, so it is necessary to reduce its band gap and improve the STH efficiency through a suitable method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of stannous tungstate film
  • A kind of preparation method of stannous tungstate film
  • A kind of preparation method of stannous tungstate film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The operation steps are as follows:

[0020] 1. Put the cleaned FTO and Si slices on the sample stage.

[0021] 2. Pump the vacuum of the reaction chamber to 4*10 -4 Pa (4~7*10 -4 Pa, to achieve the above range of vacuum).

[0022] 3. Access O 2 and Ar.

[0023] 4. Apply a power of 100W to the Sn (99.99%) and W (99.95%) targets respectively through the radio frequency power supply.

[0024] The specific process is as follows:

[0025] Prepare stannous tungstate film at room temperature, and pump the vacuum of the reaction chamber to 4-7x10 -4 After Pa, pass O 2 The mixed gas of Ar and Ar was prepared by applying a power of 100W to the Sn (99.99%) and W (99.95%) targets respectively by a radio frequency power source. When a current is passed through the target, a plasma is formed in front of the target, sputtering out the atoms of the target.

[0026] The thickness of the film is controlled by varying the deposition time. For example, when the deposition time ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
band gapaaaaaaaaaa
thicknessaaaaaaaaaa
purityaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of conductive oxide thin films, and specifically discloses a preparation method of a stannous tungstate thin film. The present invention utilizes the co-sputtering method of radio frequency, and in vacuum degree is 4~7x10 ‑4 In the reaction chamber of Pa, the mixed gas of oxygen and argon is introduced, and the power of 80~150W is applied to the tin target and the tungsten target respectively through the radio frequency power supply to form plasma. The partial pressure of argon is 0.9Pa, O 2 The partial pressure is 0 to 0.42 Pa, the deposition time is 30 seconds to 10 minutes, and after the deposition is completed, it is annealed in vacuum at 600° C. for 20 minutes. The present invention adopts the radio frequency co-sputtering method to prepare the stannous tungstate thin film, which reduces the optical bandgap and adapts to photohydrolysis, and can be better applied to photohydrolysis, such as hydrogen evolution reaction. In addition, radio frequency co-sputtering is used to The sputtering method is easy to operate and can realize large-scale commercial application.

Description

technical field [0001] The invention belongs to the technical field of conductive oxide thin films, and in particular relates to a preparation method of a stannous tungstate thin film. Background technique [0002] Ternary oxides have attracted extensive attention in the oxygen evolution reaction (OER), which has greatly increased the range of materials available for OER. The best performing material among ternary compounds in the past decade is BiVO 4 , its bandgap is 2.5~2.7 eV, and its maximum photocurrent is as high as 6.9 mA*cm -2 , the maximum hydrogen evolution efficiency (STH) is as high as 8%. However, due to the large band gap of this material, its STH efficiency is still very low. Therefore, it is necessary to reduce its band gap and improve the STH efficiency through a suitable method. Tungsten Tungstate α-SnWO 4 The electronic band spans the conduction and valence bands of the water splitting redox potential, and if its bandgap range can be tuned to a smalle...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35
CPCC23C14/0036C23C14/08C23C14/352
Inventor 博热耶夫·法拉比埃泽尔·阿金诺古冯柯金名亮迈克尔·吉尔森
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
PatSnap Eureka logo

PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.

X (Twitter)LinkedInYouTubeSubstack

© 2026 PatSnap. All rights reserved. 

Terms of Service

 | 

Privacy policy

 | 

Modern Slavery Act Transparency Statement