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Preparation method of band gaps adjustable magnesium-doped copper-zinc-tin-sulfur film

A copper-zinc-tin-sulfur and thin-film technology, applied in chemical instruments and methods, tin compounds, inorganic chemistry, etc., can solve problems such as environmental and health hazards, and achieve the effect of avoiding hazards

Inactive Publication Date: 2015-03-11
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the environmental and health hazards caused by the current method of selenization to regulate the copper-zinc-tin-sulfur band gap

Method used

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  • Preparation method of band gaps adjustable magnesium-doped copper-zinc-tin-sulfur film
  • Preparation method of band gaps adjustable magnesium-doped copper-zinc-tin-sulfur film
  • Preparation method of band gaps adjustable magnesium-doped copper-zinc-tin-sulfur film

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Experimental program
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Embodiment

[0012] Dissolve equal volumes of copper acetate, zinc acetate, stannous chloride, and thiourea with concentrations of 0.875 mol / L, 0.4375 mol / L, 0.4375 mol / L, and 1.75 mol / L in 30 ml of ethylene glycol methyl ether and 3 ml of ethanolamine, at 45°C, stir until completely dissolved, then add thiourea and stir until completely dissolved. Measure 5 ml of this solution, add magnesium chloride with a ratio of 0, 0.1, 0.3, 0.5, 0.8 to zinc, stir until completely dissolved, and obtain a magnesium-doped copper-zinc-tin-sulfur solution. This solution was dropped on the substrate placed on the spin coater, spin-coated at a low speed of 800 rpm for 6 s, and then spin-coated at a high speed of 2500 rpm for 20 s. After the spin coating was completed, it was dried at 300 °C for 5 min, and then the process of spin coating and drying was repeated 5 times to obtain a Mg-doped copper-zinc-tin-sulfur film with a thickness of 2 μm. figure 2 It is the X-ray diffraction pattern of copper-zinc-tin...

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Abstract

The invention relates to a preparation method of a copper-zinc-tin-sulfur (Cn2ZnSnS4) film with band gaps controlled by magnesium impurity concentration. The preparation method is characterized in that the copper-zinc-tin-sulfur films with different magnesium contents are prepared from magnesium chloride, copper acetate, zinc acetate, tin chloride and thiourea serving as raw materials by utilizing sol-gel technology; when the ratio of magnesium to zinc varies between 0 and 0.8, the corresponding band gap can vary between 1.54eV and 1.22eV. The method has the advantages of simple process, low cost and nontoxic and harmless doped element and can be used for preparing stacked solar cells with copper-zinc-tin-sulfur absorbing layers with different band gaps.

Description

technical field [0001] The invention relates to a preparation method of a copper-zinc-tin-sulfur thin film whose band gap is regulated by a magnesium component. Magnesium chloride, copper acetate, zinc acetate, stannous chloride and thiourea are used as raw materials, and belongs to the field of thin film solar cell materials. Background technique [0002] CuZnSnS is a direct bandgap compound semiconductor with an optical bandgap of 1.5 eV and an absorption coefficient of up to 10 at the high-energy side of the absorption edge. 4 cm -1 , is used to prepare the absorber layer of thin-film solar cells. Copper zinc tin sulfur is used as the absorbing layer, and its optical bandgap is an important parameter to control the photoelectric conversion efficiency of thin-film solar cells, especially tandem solar cells with different bandgaps. At present, the copper-zinc-tin-sulfur bandgap adjustment method is to dope selenium into copper-zinc-tin-sulfur. 2 Se) is a highly toxic su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/00H01L31/04H01L31/0216
CPCY02E10/50
Inventor 李永峰肖振宇姚斌丁战辉
Owner JILIN UNIV