Self-alignment contact structure and formation method thereof

Abstract

The invention provides a self-alignment contact structure and a formation method thereof. The formation method of the self-alignment contact structure comprises the steps of providing a substrate, wherein gate structures are formed on the substrate; forming a spacer lining layer on the gate structures and the substrate; forming a sacrifice layer among the gate structures and on the gate structures; forming a dielectric plug penetrating the sacrifice layer above the gate structures; removing the sacrifice layer to form a contact opening among the gate structures; smoothly forming an etching-resistant layer to cover a side wall and the bottom of the contact opening; and forming a contact plug in the contact opening. By the formation method of the self-alignment contact structure, a leakage current between the gate structures and the self-alignment structure is prevented.

Description

technical field [0001] The present invention relates to a semiconductor technology, and in particular to a self-aligned contact structure and its forming method. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological developments in integrated circuit design and materials have produced generations of integrated circuits, where each generation has smaller and more complex circuits than the previous generation. In the course of the development of integrated circuits, the geometric size gradually shrinks. [0003] As the size of the integrated circuit shrinks, the distance between the self-aligned contact structure and the gate becomes smaller, so the probability of leakage current generated by the short circuit increases. When conventionally forming the self-aligned contact structure, the sidewall spacers of the gate may be lost during the formation of the self-aligned contact structure. Such incomplete sidewa...

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Problems solved by technology

Such incomplete sidewall spacers may not effectively isolate the self-aligned contact structure from the gate, resulting in leakage current between the gate and the self-aligned contact structure after cycling.

[0004] While existing self-aligned contact structures are adequate for the original purpose, they are not satisfactory in all respects

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