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Power semiconductor device

一种功率半导体、元件的技术，应用在半导体器件、电气元件、电路等方向，能够解决高击穿电压困难、功率半导体元件低导通阻抗等问题，达到消除电场扭曲现象、改善击穿电压、良好元件特性的效果

Inactive Publication Date: 2019-10-29
UPI SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the size of electronic components continues to shrink, it is becoming more and more difficult to maintain low conductance resistance (Conductance Resistance) and high breakdown voltage (Breakdown voltage) of power semiconductor components

Method used

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  • Power semiconductor device
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Embodiment Construction

[0021] The present invention will be described more fully with reference to the accompanying drawings of this embodiment. However, the present invention can also be embodied in various forms and should not be limited to the embodiments described herein. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity. The same or similar symbols represent the same or similar elements, and the following paragraphs will not repeat them one by one.

[0022] figure 1 It is a schematic top view of a power semiconductor element according to the first embodiment of the present invention. Figure 2A yes figure 1 The schematic cross-section of the line I-I'. In the following embodiments, the first conductivity type is N-type and the second conductivity type is P-type as an example for illustration, but the present invention is not limited thereto. Those skilled in the art should understand that the first conductivity type can also be P-type, and the second con...

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Abstract

A power semiconductor device including a substrate having an active region and a terminal region is provided. The terminal region surrounds the active region. A first epitaxial layer is disposed on the substrate in the active region and the terminal region. A second epitaxial layer is disposed on the first epitaxial layer. The second epitaxial layer includes a first termination trench, a second termination trench, and a third termination trench. The first termination trench is disposed in the terminal region and is adjacent to the active region. The second termination trench is disposed in theterminal region. The third termination trench is disposed in the terminal region. The second termination trench is located between the first termination trench and the third termination trench. The third termination trench has a third electrode electrically connected to a drain.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a power semiconductor element. Background technique [0002] Power semiconductor components are semiconductor components widely used in analog circuits. Since the power semiconductor device has a very low on-resistance and a very fast switching speed, the power semiconductor device can be applied in a power switch circuit to make power management techniques more efficient. [0003] With the advancement of science and technology, electronic components are developing towards thinner and lighter. As the size of electronic components continues to shrink, it is becoming more and more difficult to maintain low conductance resistance and high breakdown voltage of power semiconductor components. Therefore, how to improve the on-resistance and breakdown voltage of the power semiconductor element under a certain element size will become an important subject. Contents of the invention [0004...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/06H01L29/739H01L29/0878H01L29/407H01L29/7811H01L29/7813H01L29/1095H01L29/41766
Inventor 陈劲甫
Owner UPI SEMICON CORP
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